2SC4915 Search Results

2SC4915

Abstract: MJE 131
Contextual Info: 2SC4915 SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC4915 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE +

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2SC4915 U nit in HIG H FREQUENCY AM PUFIEFt APPLICATIONS. mm FM , RF, M IX , IF A M PLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

Contextual Info: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2.3dB (typ.)

2SC4915

Contextual Info: 2SC4915 TO SH IBA 2SC4915 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

Contextual Info: 2SC4915 TOSHIBA 2SC4915 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM , RF, M IX , IF AM PLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

2SC4915

Contextual Info: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. · Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta = 25°C)

Contextual Info: Reliability Tests Report Product Name: 2SC4915 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SC4915

Contextual Info: 2SC4915 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC4915 ○ 高周波増幅用 ○ FMRF、MIX、IF 増幅用 単位: mm • 帰還容量が小さい。 : Cre = 0.55 pF 標準 • 低雑音指数です。 : NF = 2.3dB (標準)

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4915 U nit in mm HIGH FREQUENCY A M P U F IE R APPLICATIONS. FM, RF, M IX, IF A M P U F IER APPLICATIONS. • • 1.6 ± 0.2 Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

2SC4915

Contextual Info: 2SC4915 TOSHIBA 2SC4915 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, M IX , IF AMPLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

Contextual Info: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2.3dB (typ.)

Contextual Info: TOSHIBA 2SC4915 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 4 9 1 5 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. U nit in mm l.G ± 0 .2 0.8 ± 0.1 • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ.

2SC4915

Contextual Info: 2SC4915 TOSHIBA 2SC4915 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM, RF, MIX, IF AM PLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

2SC4915

Contextual Info: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2.3dB (typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

3sk catalog

Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS