TPM1919 Search Results

TPM1919

Abstract: TPM1919-40
Contextual Info: TPM1919-40 FEATURES: • H IG H PO W ER ■ PARTIALLY M A T C H E D TYPE ■ H E R M E T IC A LL Y SEA LED PACKAGE P-idB = 46. 0 dB m at 1. 9 G H z ■ H IG H GAIN GidB = 13 dB 3t 1. 9 G H z RF PERFO RM AN CE SPEC IFIC A TIO N S Ta = 25 °C C H A R A C TE R IS T IC S

IRS12

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point Gl dB Drain Current Power Added Efficiency CONDITION VDS- ÍOV

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

TPM1919-40

Abstract: SO47 TPM1919-40-311
Contextual Info: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROW AVE SEM ICO NDU CTO R TPM1919—40 TECHNICAL DATA FEATURES : • HIGH POWER ■ HIGH GAIN ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE pidB = 46. 0 dBm at 1. 9 GHz GidB = 13 dB at 1.9 GHz RF PER FO R M A N C E SPEC IFIC A TIO N S Ta = 2 5 °C

TMD1414-2

Abstract: TGM9398-25 8596-50
Contextual Info: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3

TPM1919-40

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point

TPM1919-40

Contextual Info: T O S H IB A MICROWAVE POWER G aAs FET MICROW AVE SEM ICO NDUCTOR TPM1919-40-311 TECHNICAL DATA FEATURES : • HIGH POWER ■ HIGH GAIN PARTIALLY MATCHED TYPE P-idB = 47.0 dBm at 1.9 G Hz ■ HERMETICALLY SEALED PACKAGE ^idB = 13 dB at 1.9 GHz RF PERFO RM AN CE SPECIFICATIO NS Ta = 2 5 °C

TPM1919-60

Abstract: tpm1919 2-16G6A
Contextual Info: MICROWAVE POWER GaAs FET TPM1919-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=48.0dBm at 1.96GHz „ HIGH GAIN G1dB=13.0dB at 1.96GHz „ PARTIALLY MATCHED TYPE „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS

tpm1919

Abstract: TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-60 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P-idB = 48.0 dBm at 1.9 GHz ■ HIGH GAIN G1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain G ldB=13dB at 1.96GHz CHARACTERISTICS SYMBOL

tpm1919

Abstract: TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER MMIC AM PLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES • Partially Matched Type High Power PldB=47.0dBm ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.9GHz RF PERFORMANCE SPECI FI CATIONS Ta=25 °C

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

cq 531

Abstract: cq 529 tpm1919 TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

RFM70U12D

Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

TGI7785-120L

Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード 小信号 MMIC 高周波セルパック マイクロ波半導体