2SC5094 Search Results

Contextual Info: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

Contextual Info: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2= 7.5dB f=2GHz + 0.25 .1 .5 -0 .1 5 .

2SC5094

Contextual Info: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

NF NPN Silicon Power transistor TO-3

Contextual Info: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz +0.5 2.5-0.3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

NPN 1147

Contextual Info: 2SC5094 SILICQN NPN EPITAXIAL pi-ANAR t y p e t r a n s is t o r U n it in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A TIO N S. • Low N oise Figure, H igh Gain. N F = 1.8dB, |S 2ieP = 7-5dB f=2G IIz M A X IM U M R ATINGS (Ta = 25°C)

Contextual Info: 2SC5094 NPN 10 GHz RF Wideband Transistor COLLECTOR 3 3 P b Lead Pb -Free 2 2 BASE 1 FEATURES High power gain Low noise figure High DC current gain SC-59 package 1 EMITTER SC-59 Applieation: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC)

2SC5094

Contextual Info: TO SH IBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 - 0 .3 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2= 7.5dB f=2GHz + 0.25 k1-5-°-15>i MAXIMUM RATINGS (Ta = 25°C)

2SC5094

Abstract: Low Noise uhf transistor
Contextual Info: 2SC5094 NPN 10 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 3 1 1 BASE FEATURES High power gain Low noise figure High DC current gain SC-59 package 2 2 SC-59 EMITTER Applieation: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC)

2SC5094

Abstract: sc 7113 Pc 614
Contextual Info: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain. • NF=1.8dB, |S2lel2= 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB typ. , |S21e|2 = 7.0dB (typ.) (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5094

Abstract: 6514 TRANSISTOR
Contextual Info: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = 1.8dB, |S2lel2= 7.5dB f = 2GHz Unit in mm 2.5 4 0.5 0.3 • * - MAXIMUM RATINGS (Ta = 25°C)

sh 2089

Contextual Info: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q94 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U nit in mm Low Noise Figure, High Gain. - 4- 0.5 2 . 5 - 0.3 N F—1.8dB, |S2le|2—7.5dB f—2GHz +0.25 1. 5 - 0.15 h MAXIMUM RATINGS (Ta = 25°C)

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

3120 tuner

Abstract: C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161
Contextual Info: [I] PRODUCT OUTLINE & EXPLANATION 1. SELECTION GUIDE PACKAGE TYPES & APPLICATION 1.1 TRANSISTORS FOR TV TUNER Package Style TO -92 A PPLICATIO N ♦ Super-Mini Super-Mini Quad (SO T-23 M O D ./ (S O T -143 M O D .) T O -23 6 M O D . ) * * % % " • UHF M IX

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or