2SC3123 Search Results

RF POWER TRANSISTOR NPN

Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃

200MHZ

Abstract: 2SC3123 marking he
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Reverse Transfer Capacitance : Cre=0.4F TYP. 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High Conversion Gain :Gce=23dB TYP. 1 Low Reverse Transfer Capacitance : Cre=0.4F(TYP.) 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: 2SC3123 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC3123 ○ テレビ VHF チューナ周波数変換用 ○ VHF 帯高周波増幅用 • 変換利得が高い。 • 帰還容量が小さい。 : Cre = 0.4 pF 標準

2SC3123

Abstract: TTA25A200A
Contextual Info: 2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications Unit: mm • High conversion gain: Gce = 23dB typ. • Low reverse transfer capacitance: Cre = 0.4 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .

Contextual Info: 2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications Unit: mm • High conversion gain: Gce = 23dB typ. • Low reverse transfer capacitance: Cre = 0.4 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC3123

Abstract: PH02
Contextual Info: TO SHIBA 2SC3123 2 S C 3 1 23 TOSHIBA TRANSISTOR TV VHF MIXER APPLICATIONS SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 • • High Conversion Gain Low Reverse Transfer Capacitance Gce = 23dB Typ. Cre = 0.4pF (Typ.) M A X IM U M RATINGS (Ta = 25°C)

transistor C5D

Abstract: 2SC3123
Contextual Info: 2SC3123 TOSHIBA TOSHIBA TRANSISTOR TV VHF MIXER APPLICATIONS. • • SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 23 Unit in mm + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.)

2SC3123

Abstract: MA40150
Contextual Info: 2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications Unit: mm • High conversion gain: Gce = 23dB typ. · Low reverse transfer capacitance: Cre = 0.4 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol

RCBO

Contextual Info: TOSHIBA 2SC3123 i <;r 3 1 j * TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE W ÊF W ÊF • M T M A X IM U M RATINGS Ta = 25°C S ym bol VCBO VCEO v EBO Ic Ib PC Tj Tsts CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

5962A

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3123 TV VHF MIXER APPLICATIONS. • • High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SC3123

Abstract: 5962A
Contextual Info: 2SC3123 TO SH IBA 2 S C 3 1 23 TOSHIBA TRANSISTOR TV VHF MIXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SC3115

Abstract: sC4633 2sc3114 2SC3136 2SC3098 2SC3099 2SC3102 2SC3103 2SC3104 2SC3105
Contextual Info: - 146 - WtXËfà 2g -g ÍT ffl -n & Vç b o VcEO IC DC Pc Pc* (A) (W) (W) (V) (V) 2SC3098 VHF/UHF LN A 30 20 0.05 0.15 20 0.03 0.15 2SC3099 * 2 VHF/UHF LN A 20 2SC31Ö1 HF PA 35 2SC3103 H# H « Hæ 2SC3104 (Ta=25°C) ( T a = 2 5 U *EP(ÌTc=25£C) ICBO. (max)

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック