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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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GC321AD7LP103KX18J
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Murata Manufacturing Co Ltd
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High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC331AD7LQ153KX18J
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Murata Manufacturing Co Ltd
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High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC331CD7LQ473KX19K
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Murata Manufacturing Co Ltd
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High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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