2SC3098 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

Contextual Info: TO SH IB A 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure NF = 2.5dB, |S2ie l2= 14.5dB f = 500MHz NF = 3.0dB, |S21el2= 9-0dB (f=lG H z) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SC3115

Abstract: sC4633 2sc3114 2SC3136 2SC3098 2SC3099 2SC3102 2SC3103 2SC3104 2SC3105
Contextual Info: - 146 - WtXËfà 2g -g ÍT ffl -n & Vç b o VcEO IC DC Pc Pc* (A) (W) (W) (V) (V) 2SC3098 VHF/UHF LN A 30 20 0.05 0.15 20 0.03 0.15 2SC3099 * 2 VHF/UHF LN A 20 2SC31Ö1 HF PA 35 2SC3103 H# H « Hæ 2SC3104 (Ta=25°C) ( T a = 2 5 U *EP(ÌTc=25£C) ICBO. (max)

Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)

2SC309

Abstract: 2SC3098 uPI Semiconductor
Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)

nzp 2SC3098

Abstract: 2SC3098 UI9600 GOOD-ARK Electronics ,nzp 2SC3098 GOOD-ARK IC 2030
Contextual Info: SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3098 TO-220 Plastic-Encapsulate Transistors 2SC3098 TRANSISTOR NPN TO-220 FEATURES Power amplifier applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted 3. EMITTER Symbol Parameter Value

Contextual Info: 2SC3098 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

sot-23 Marking Mb

Abstract: 2SC3098 S21E-2 Marking MB
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SC3098

Contextual Info: 2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF~C Band Low Noise Amplifier Applications • Low noise figure · NF = 2.5dB, |S21e|2 = 14.5dB f = 500 MHz · NF = 3.0dB, |S21e|2 = 9.0dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C)

2SC3098

Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure NF = 2.5dB, |S2lel2= 14.5dB f = 500MHz NF = 3.0dB, |S2lel2= 9.0dB (f = 1GHz) + 0.5 MAXIMUM RATINGS (Ta = 25°C)

2SC3098

Abstract: transistor marking 5Z
Contextual Info: TO SH IBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure NF = 2.5dB, |S2lel2= 14.5dB f = 500MHz NF = 3.0dB, |S2lel2= 9.0dB (f = 1GHz) + 0.5 MAXIMUM RATINGS (Ta = 25°C)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

BU506AF

Abstract: bu508as
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC2720

Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
Contextual Info: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2SC3119

Abstract: 2SA1245 2SC3011 2SC3098 2SC3606 2SK210
Contextual Info: Powered -3 by ICminer.com Application PNP f T TYP. MIN. VcE(sat) MAX. hFE Type No. v CE0 'c PC VCE >C (V) (mA) (mW) (V) (mA) NF MAX. (TYP.) CD VCE >E VcE lc f (MHz) (V) (mA) (dB> (V) (mA) (Hz) - 900 10 2 6.0 10 3 800M - - 2400 10 2 (8) 10 2 800M •c NPN