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    2SC31 Search Results

    2SC31 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC3127 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
    2SC3115-T1B-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SC31 Price and Stock

    Hirose Electric Co Ltd HR30-8R-12SC(31)

    CONN RCPT HSG FMALE 12POS PNL MT
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    DigiKey HR30-8R-12SC(31) Bag 69 1
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    Avnet Americas HR30-8R-12SC(31) Tray 12 Weeks 50
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    Newark HR30-8R-12SC(31) Bulk 20 1
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    TME HR30-8R-12SC(31) 500
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    Avnet Abacus HR30-8R-12SC(31) Reel 14 Weeks 500
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    Chip1Stop HR30-8R-12SC(31) Bulk 22
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    Sager HR30-8R-12SC(31) 1
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    Panasonic Electronic Components 2SC31300QL

    RF TRANS NPN 10V 0.05A MINI3
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    Amphenol Aerospace JT06RP-22-2SC(318)

    PLUG
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    Amphenol Aerospace JT07RE-24-2SC(318)

    RECEPT
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    Amphenol Aerospace JT00A-18-32SC(319)

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    2SC31 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC31 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC31 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC31 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC31 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC31 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC31 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC31 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC31 Unknown Cross Reference Datasheet Scan PDF
    2SC310 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC310 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC310 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC310 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC310 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC310 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC310 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC310 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC310 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC310 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2SC31 Datasheets Context Search

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    RF POWER TRANSISTOR NPN

    Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃


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    PDF 2SC3123 200MHz 260MHz RF POWER TRANSISTOR NPN 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor

    2SC3121

    Abstract: 30MHZ
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Exellent Linearity 0.55 High Transition Frequency :fT=1500MHz Typ. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SC3121 OT-23 1500MHz 30MHZ 2SC3121 30MHZ

    2SC3163

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3163 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25℃


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    PDF 2SC3163 O-220C 2SC3163

    2SA1265N

    Abstract: 2SC3182 2SA1265
    Text: Inchange Semiconductor Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SA1265N 2SC3182 2SA1265 -140V; 2SA1265N 2SC3182

    2SA1265N

    Abstract: 2SC3182 2SA1265
    Text: JMnic Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SC31822SA1265 with short pin APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SA1265N 2SC3182 2SA1265 -140V; 2SA1265N 2SC3182

    2SC3158

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3158 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High switching speed APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol


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    PDF 2SC3158 O-220F O-220F) 2SC3158

    2SA1249

    Abstract: 2SC3117
    Text: JMnic Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SC3117 ・High breakdown voltage ・Large current capacity APPLICATIONS ・For color TV sound output,converters, Inverters applications


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    PDF 2SA1249 O-126 2SC3117 pow500mA; -50mA -120V; -100mA -10mA 2SA1249 2SC3117

    2SC3149

    Abstract: NPN 800V
    Text: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications


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    PDF 2SC3149 O-220C 00V/1 10MHz 2SC3149 NPN 800V

    2SC3156

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications


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    PDF 2SC3156 2SC3156

    2SA1249

    Abstract: 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311
    Text: Inchange Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications


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    PDF 2SA1249 O-126 2SC3117 -120V; -100mA -10mA -50mA 2SA1249 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311

    200MHZ

    Abstract: 2SC3123 marking he
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Reverse Transfer Capacitance : Cre=0.4F TYP. 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    PDF 2SC3123 OT-23 Juncti55 260MHz 200MHZ 200MHZ 2SC3123 marking he

    marking HB

    Abstract: 2SC3120
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25


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    PDF 2SC3120 OT-23 800MHz 830MHz marking HB 2SC3120

    2SC3181N

    Abstract: 2SA1264N
    Text: Inchange Semiconductor Product Specification 2SC3181N Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1264N APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage


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    PDF 2SC3181N 2SA1264N 2SC3181N 2SA1264N

    2SC3113

    Abstract: No abstract text available
    Text: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package


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    PDF 2SC3113 2SC3113

    2SC31

    Abstract: m15t
    Text: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.


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    PDF 2SC31 200MHz) 2SC3122 50MHz m15t

    1SV211

    Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
    Text: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245


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    PDF SC-59) SC-70) 3SK146 3SK153 2SC3828 2SC4214 SC4244 2SC3121 2SC3120 2SC3862 1SV211 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK275

    2SC3136

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF -2SC3136 SC-43 260MHz 2SC3136 SCN-5962AC0-C5) TTA25A200A 2SC3136

    Untitled

    Abstract: No abstract text available
    Text: 2SC3124 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation


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    PDF 2SC3124

    2SC3645

    Abstract: No abstract text available
    Text: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page


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    PDF 2SA1257 2SA1415 2SA1418 2SA1419 2SA1552 2SA1682 2SA1700 2SA1740 2SA1772 2SA1773 2SC3645

    2SC3173

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V


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    PDF H707L, 2SC3173 201OA 1309B IS-20MA IS-313 IS-313A 2SC3173

    BT35f

    Abstract: TOP3 package 2sc317 2SC3171 SC-65
    Text: Power T ransistors 2SC3171 2SC3171 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching Unit I mm 15.5max. • Features 4.7max. 13.5max. • H igh s p e e d sw itch in g I k • H igh c o lle c to r c u r re n t Ic


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    PDF 2SC3171 bT32fiSE BT35f TOP3 package 2sc317 SC-65

    2SC3171

    Abstract: SC-65
    Text: Pow er Tra n sisto rs 2SC3171 2SC3171 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching Unit I mm 4.7 max. 15.5max._ 13.5max. ll.Omax. • Features • High sp eed switching 1 • High collector current <Ic


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    PDF 2SC3171 2SC3171 SC-65

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3104 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 1 0 4 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING Dimensions in mm cally designed for UHF power amplifier applications. FEATURES •


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    PDF 2SC3104

    2SC3104

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3104 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION 2 S C 3 1 0 4 is a silicon NPN epitaxial planar typ e transistor sp e cifi­ OUTLINE DRAW ING D im ension s m m m cally designed for U H F pow er am plifier applications. FEATURES


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    PDF 2SC3104 2SC3104