2SC382 Search Results

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

2SC3822

Contextual Info: SavantIC Semiconductor Product Specification 2SC3822 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·For power switching ,power amplifier, power driver and electronic supply applications PINNING PIN

2SC3829

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3

2SC3829

Abstract: 800mhz transistor
Contextual Info: Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current

2SC3829

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 0.4±0.2

2SC3825

Contextual Info: Power Transistors 2SC3825 2SC3825 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mm • Features I o • High speed switching 3.7max. 7.3max. 0.9 ± 0.1I 0.5max • Low collector-em itter saturation voltage V ce (sau

2SC3825

Abstract: LE301 50x50X2mm
Contextual Info: Power Transistors 1^32352 ooibmn 2SC3825 bti 2SC3825 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching • Features • High speed switching • Low collector-em itter saturation voltage Vce (saw • “I Type” package configuration with a cooling fin for direct soldering

2SC3824

Abstract: 2SC3824A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.2 (1.0)

2SC3824

Abstract: 2SC3824A
Contextual Info: Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High-speed switching • High collector-base voltage (Emitter open) VCBO

2SC3827

Abstract: marking t54 S2LB
Contextual Info: SILICON TRANSISTOR 2SC3827 UHF OSILLATOR NPN SILICON EPITAXIAL TRANSISTOR " M IN I M O L D " DESCRIPTION PACKAGE DIMENSIONS The 2SC3827 is an NPN silicon epitaxial transistor intended fo r use as in m illim e ter* UHF oscillator in a tuner o f a TV receiver.

2SK1605

Contextual Info: Application Block Diagrams • V id e o A pplications ß Liquid Crystal Display TV Fluorescent light inverter circuit 2SK1605/2SC4559/2SC3824) 9 EVF/VPS (Color Liquid Crystal Panel Product Kits) R,G,B R.G.B -2 7 - Panasonic

2SC3821

Contextual Info: 2SC3821 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-220F17 特長 ：Features 特長： 高耐圧、

2SC3828

Abstract: marking HB TV power transistor
Contextual Info: TOSHIBA 2SC3828 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE 7 < ; r Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS. +ag SÌ9-Q 3 • • • Low Noise Figure : NF = 3.5dB Typ. High Power Gain : Gpb = 17dB (Typ.) Excellent Forward AGC Characteristics . Q 65

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

2SC3829

Contextual Info: Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low noise figure NF • High gain • High forward transfer gain S21e2

Contextual Info: 2SC3822 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Pow er T ransistors 2SC3824, 2SC3824A 2SC3824, 2SC3824A Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching ■ Features • High s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e V c bo

2SC3825

Abstract: pnp 500v
Contextual Info: Power Transistors tT 3 2 a S 2 O G ltH flT 2SC3825 3T1 2SC3825 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a k d o w n V o lta g e , High S p e e d Switchin g U nit 1 mm • F e a tu r e s • High speed switching • Low collector-emitter saturation voltage V c e <sau

t930

Abstract: 2SC3822 T151
Contextual Info: 2SC3822 N P N = Bi ! £1t f r : 7V— TRI PLE D IFFU SED PLANER TYPE *M I±, HIGH VOLTAGE, HIGH SPEED SWITCHING % Outline Drawings : Features •S U E , • H i g h voltage, high speed switching High reliability : Applications • Switching regulators 9 • D C-D CUW < -*

2sc945l

Abstract: NEC 2SC945 SOT-23 2SC2785H 2SC372G-TM-Y 2SC372GTM-Y 2SC2785F A9 SOT-23 2SC945Q 2SC3622AL 2SC2785K
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 .65 70 200M 200M 200M 200M 200M 200M 200M 200M 200M 200M ~anyo ~Iect 2SC3331T 2SC3330U 2SC3331U 2SC2320L 2SC3330V 2SC3689 2SC3820 2SC3615M 2SC3615L Sanyo Elect Sanyo Elect Sanyo Elect

2SC3822

Contextual Info: 2SC3822 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-220F17 特長 ：Features 特長： 高耐圧、

2SC3820

Abstract: VEBO-15V Vebo 15V
Contextual Info: Ordering number: EN 2544B 1 N0.2544B _ 2SC3820 NPN Epitaxial Planar Type Silicon Transistor High hpE? AF Amp Applications Applications •Drivers, muting circuits Features • Adoption of FBET and MBIT processes • High DC current gain hpE = 800 to 3200

2SC3828

Contextual Info: 2SC3828 SILICON NPN PLANAR TYPE UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Low Noise Figure : NF= 3 .5dB Typ. . High Power Gain : Gpb=17dB(Typ.) . Excellent Forward AGC Characteristics MAXIMUM RATINGS (Ta-25°C) CHARACTERISTIC Collector-Base Voltage