2SK1605 Search Results

Contextual Info: 2SK1605 Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator) high-frequency power amplification

M2U Package

Contextual Info: 2SK1605 Switching Diodes MA127 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating

MA151K

Abstract: MA999 SCHOTKY 2SK1605 MA704A
Contextual Info: 2SK1605 Composite Diodes MA999 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Symbol Rating Unit Reverse voltage DC VR 30 Peak reverse voltage

MA200WK

Abstract: 2SK1605 2sk16
Contextual Info: 2SK1605 Switching Diodes MA200WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 3 +0.1 0.4 –0.05 +0.2 1.45 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

2SK1605

Contextual Info: Application Block Diagrams • V id e o A pplications ß Liquid Crystal Display TV Fluorescent light inverter circuit 2SK1605/2SC4559/2SC3824) 9 EVF/VPS (Color Liquid Crystal Panel Product Kits) R,G,B R.G.B -2 7 - Panasonic

Contextual Info: 2SK1605 Switching Diodes MA152WA Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Small capacity between pins, Ct 1 0.95 ● +0.2 Short reverse recovery period trr

Contextual Info: 2SK1605 Switching Diodes MA174 Silicon planer type Unit : mm For small power rectification and surge absorption +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R 0.5 1 2 3 Symbol Rating +0.1 0.16 –0.06 0.1 to 0.3

2SK1605

Contextual Info: Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450

Contextual Info: Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)

2sk2324

Abstract: 2SK2124 2SK2127 2sk2323
Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )

Contextual Info: Panasonic Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

Contextual Info: 2SK1605 Switching Diodes MA200WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current

MA151K

Abstract: MA999
Contextual Info: 2SK1605 Composite Diodes MA999 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R 0.5 2 3 ● Unit-1 MA704A Reverse voltage (DC) Peak reverse voltage

M4D MARKING

Contextual Info: 2SK1605 Switching Diodes MA200WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 VRM Single Forward current DC Single Peak forward current Double Single Non-repetitive peak forward surge current Double Tj Storage temperature

Contextual Info: Application Block Diagrams • Industrial, Home Applications 3 Printer (1) @ Printer (2) Power MOS FETs 2SK1605-2SK2111 -3 3 - Panasonic

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1603

Abstract: 2SK1601 2SK1606 2SK1580 2SK1582 2SK1583 2SK1584 2SK1585 2SK1586 2SK1588
Contextual Info: - 112 - ft f M £ tí: ffl € & m £ A £ 1 % E ft K V * (V) fr fê fr (A) % 3 P d /P c h (max) (A) (W) fö 4# 14 (Ta=25t3) (min) (V) (max) (V) Vd s I gss Vg s (VÏ (min) (A) (max) V d s (A) (V) Id (A) (V) (min) (S) %? Vds (V) 1d (A) 2SK1580 NEC SW MOS

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN1280

Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030