2SK1606 Search Results

MA776

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. Low forward rise voltage VF and satisfactory wave detection effi- 1st Band 2nd Band ciency Temperature coefficient of forward characteristic is small.

2SK1606

Contextual Info: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA785 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible

DIODE M4A

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA791 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● IF(AV)=100mA rectification possible ● Fast reverse recovery time trr, optimum for high-frequency rectifica-

DIODE M4A

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA793 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package with two elements (series connection) of MA792 incorporated 0.425

MA789

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA789 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1

schottky diode marking A7

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-

2SK1606

Abstract: MA205WA MA204WA
Contextual Info: 2SK1606 Switching Diodes MA204WA, MA205WA Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Short 0.8 • Features capacity between pins, Ct 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA782 Silicon epitaxial planer type Unit : mm 0.3 min. For super high-speed switching circuit For small current rectification φ1.4±0.1 • Features Sealed in the LLD package, enabling high-density mounting Reverse voltage VR (DC value) = 40V guaranteed

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA792 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible

ma741

Abstract: M1L marking
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA741 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF and satisfactory wave detection efficiency Extremely low reverse current IR 2 +0.1

Contextual Info: 2SK1606 Switching Diodes MA128 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Short reverse recovery period trr ● Small capacity between pins, Ct ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3

MA740

Abstract: Marking m3c
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA740 Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current Single Double Single Double Single Double VRRM Storage temperature

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA775 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification ø0.45 max. COLORED BAND INDICATES CATHODE ● VR (DC value)= 50V guaranteed 1st Band 2nd Band 2 • Absolute Maximum Ratings (Ta= 25˚C)

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. COLORED BAND INDICATES CATHODE ● 5mm pitch insertion possible ● Low forward rise voltage VF and satisfactory wave detection effi-

MA776

Abstract: 2SK1606
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. 5mm pitch insertion possible ● Low forward rise voltage VF and satisfactory wave detection effiTemperature coefficient of forward characteristic is small.

2sk2324

Abstract: 2SK2124 2SK2127 2sk2323
Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA792WA Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package with two elements (anode common) of MA792 incorporated 0.425

104 M3D

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA745WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF, optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA788 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1

104 M3D

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA795WK Silicon epitaxial planer type 0.28±0.05 Extra-small (SS-Mini type) package, enabling high-density mounting Low VF type (IF=1mA), optimum for low voltage rectification of 3 2 VF = 0.3V or less ● 1 0.28±0.05

Contextual Info: 2SK1606 Switching Diodes MA152WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Small capacity between pins, Ct 1 0.95 ● +0.2 Short reverse recovery period trr

MA175WA

Abstract: Ma175
Contextual Info: 2SK1606 Switching Diodes MA175WA, MA176WA Silicon epitaxial planer type Unit : mm 4.0±0.2 3.0±0.2 For switching circuits Small capacity between pins, Ct • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol MA175WA Reverse voltage (DC) MA176WA MA175WA

marking 2D diode 2PIN

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA784 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible