MA788 Search Results

ND487C2-3R

Abstract: ND487C1-3R ND487R1-3R MA746 MA763 MA775 MA776 MA777 MA778 MA780
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R

ND487C1-3R

Abstract: ND487C2-3R ND487R1-3P ND487R1-3R ND487C2-3P MA746 MA763 MA775 MA776 MA777
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R

ND487C2-3R

Abstract: ND487C1-3R ND487R1-3P ND487R1-3R ND411G-2 MA777 ND411G-1 MA763 MA775 MA776
Contextual Info: - 170- -fr S S «a au B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P

JUA7885

Contextual Info: F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S • /iA7800 S E R IE S MA7885 E L E C T R IC A L C H A R A C T E R IS T IC S V|N - 15 V, I q u T = 500 m A, - 5 5 ° C < T j < 150°C, C|N = 0.33 ^ F . C q U T “ Q-1 unless otherwise specified

Contextual Info: Schottky Barrier Diodes SBD MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 200 mA rectification is possible • VR = 60 V is guaranteed

MA3X788

Abstract: MA788
Contextual Info: Schottky Barrier Diodes SBD MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 200 mA rectification is possible • VR = 60 V is guaranteed

MA3X788

Abstract: MA788
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

ND487C1-3R

Abstract: nd487c13r ND487C2-3R MA776 ND487R1-3R MA746 MA763 MA775 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R

ND487C1-3R

Abstract: ND487C2-3R ND487R1-3R MA782 MA746 MA763 MA775 MA776 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R

MA3X788

Abstract: MA788
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

MA3X788

Abstract: MA788 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X788 (MA788) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 1.9 ± 0.2

ND487C1-3R

Abstract: ND487R1-3R ND487C2-3R ND487C2-3P ND411G-2 ND487RI-3P MA746 MA763 MA775 MA776
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R

ND487C1-3R

Abstract: ND487C2-3R ND487R1-3R ND411G-2 MA746 MA763 MA775 MA776 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA788 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1

MA758

Abstract: A720 A788 IF FM detector MA721 MA788 TBA510 TBA530 UA308 UA3089
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C42 juA3089 L-C41 MA788 □ 16 ^ BLANKIN G IN Q LU M INANCE IN IF IN Q 15 CHRO M A IN p CO M M O N L . 3 • B-Y CHRO M A IN | Z I 14 □ 4 13 □ 5 GND Q 12 R-Y CHRO M A IN □ IF IN p i BYPASS I— bo u t GOUT

TBA641A12

Abstract: TDA2002 TBA820 mA706B TBA820L MA788 TBA510 TBA530 TBA641B11 TBA800
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C42 juA3089 L-C41 MA788 □ 16 ^ BLANKIN G IN Q LU M INANCE IN IF IN Q 15 CHRO M A IN p CO M M O N L . 3 • B-Y CHRO M A IN | Z I 14 □ 4 13 □ 5 GND Q 12 R-Y CHRO M A IN □ IF IN p i BYPASS I— bo u t GOUT

MA3X788

Abstract: MA788
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

uA308

Abstract: A788 A1391 lc46 A1394 MA788 TBA510 TBA530 TBA540 TBA560C
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C42 juA3089 L-C41 MA788 □ 16 ^ BLANKIN G IN Q LU M INANCE IN IF IN Q 15 CHRO M A IN p CO M M O N L . 3 • B-Y CHRO M A IN | Z I 14 □ 4 13 □ 5 GND Q 12 R-Y CHRO M A IN □ IF IN p i BYPASS I— bo u t GOUT

MA3X788

Abstract: MA788
Contextual Info: Schottky Barrier Diodes SBD MA3X788 (MA788) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 200 mA rectification is

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7805

Abstract: MA7812 MA7815 MA7824 MA7812 to-3 MA7905 mA7806 MA7805 to-3 MA7818 mA7808
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-VR5 L-VR6 MA78CB, mA78MXX, MA78CXX, mA78XX mA79MG COM MON \ f -t_ r OUT 3 / COM M ( 2) ~ j“ i L-VR7 L-VR8 mA79MXX, mA79XX mA78G, mA78MG -u H T I Ln 1CO NT > IN 3 : o / ~ (3) — I O UT UN 1COM M V comm COM M