MA3J745E
Abstract: MA745WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package Two elements are contained in one package, allowing highdensity mounting Low forward voltage VF , optimum for low voltage rectification
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Contextual Info: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification
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104 M3D
Abstract: MA3J745D MA3J745E MA745WA MA745WK
Contextual Info: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC)
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package Two elements are contained in one package, allowing highdensity mounting Low forward voltage VF , optimum for low voltage rectification
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching Features • Package Two elements are contained in one package, allowing highdensity mounting
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MA3J745D
Abstract: MA3J745E MA745WA MA745WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA), MA3J745E (MA745WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting
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104 M3D
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA745WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF, optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-
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MA3J745E
Abstract: MA745WK
Contextual Info: Schottky Barrier Diodes SBD MA3J745E (MA745WK) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward
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MA3J745E
Abstract: MA745WK SMini3-F1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package Two elements are contained in one package, allowing highdensity mounting Low forward voltage VF , optimum for low voltage rectification
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diodes ir
Abstract: diode 104 MA745WA MA3J745D MA3J745E MA745WK
Contextual Info: Schottky Barrier Diodes SBD MA3J745D (MA745WA), MA3J745E (MA745WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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kt 207
Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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hss102hsu88hsu27630mhz+10ma2s784ma4s71381min26maxfij44kt 207ma741ma723420c610c
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ma741
Abstract: MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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hss102hsu88hsu27630mhz+9ma2s784ma4s713890-45mhzma740ma741ma723420c610cma700
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MA717
Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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OCR Scan
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hss102hsu88hsu27630mhz+9ma2s784ma4s713i15-025minma723ma741420c610cma700
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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610A
Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT
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MA723
Abstract: 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700 MA700A
Contextual Info: - Ä fií £ tt « Yrrm V HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA B aL BÍL B Ä B Ä fôT fóT t&T 30 MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT
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hss102hsu88hsu27630mhz+8ma2s784ma4s71320minma723420c610cma700ma700a
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA MA717H MA721 MA721WA MA721M MA722 MA723 MA724 MA726 MA727 MA728 £ tt Vr V (V) B aL B ÍL B Ä B Ä fôT fóT
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MA716
Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt Vr V (V) B Ä B Ä fôT fóT t&T 30 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT
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