HSU88 Search Results

HSU88

Abstract: re 15 marking
Contextual Info: Diodes SMD Type Silicon Schottky Barrier Diode HSU88 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low capacitance. C=0.8pF max +0.1 3.7-0.1 Low forward voltage. Ultra small Resin Package (URP) is suitablefor high density surface

Contextual Info: Product specification HSU88 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low capacitance. C=0.8pF max +0.1 3.7-0.1 Low forward voltage. Ultra small Resin Package (URP) is suitablefor high density surface 0.50 0.1max 0.35

HSU88

Abstract: DSA003636
Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev. 7 Dec. 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

kt 207

Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

ma741

Abstract: MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer HITACHI ADE-208-077F Z Rev 6 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

MA723

Abstract: 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700 MA700A
Contextual Info: - Ä fií £ tt « Yrrm V HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA B aL BÍL B Ä B Ä fôT fóT t&T 30 MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0140-0800Z Previous: ADE-208-077G Rev.8.00 Nov.06.2003 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

HSU88

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev 7 Dec 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA MA717H MA721 MA721WA MA721M MA722 MA723 MA724 MA726 MA727 MA728 £ tt Vr V (V) B aL B ÍL B Ä B Ä fôT fóT

Contextual Info: HSU88 Spice parameter * Model generated on Oct 22, 96 * MODEL FORMAT: SPICE3, PSPICE apply. * UCB DIODE Model .MODEL HSU88 D +IS=7.40566E-10 +BV=11 +VJ=0.35 +KF=0 +XTI=3 +TT=1.0E-9 +RS=9.9221299 +IBV=3.14648E-5 +M=0.14 +AF=1 +EG=1.17 +N=1.0105824 +CJO=5.810079E-13

HSU88

Abstract: Hitachi DSA002712
Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077F Z Rev 6 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

HSU88

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0140-0800Z Previous: ADE-208-077G Rev.8.00 Nov.06.2003 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSU88-Silicon Schottky Barrier Diode for CATV Converter Features Outline • Low capacitance. C=0.8pF max • Low forward voltage. • Ultra small Eesin package (URP) is suitable for surface mount design. Cathode mark ,-JZT Mark Ordering Information

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt Vr V (V) B Ä B Ä fôT fóT t&T 30 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT

HSU88

Abstract: Hitachi DSA00773
Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077F Z Rev 6 June 1996 Features • • • Low capacitance. (C=2.0pF max) Low forward voltage. Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

HSU88

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer HITACHI ADE-208-077F Z Rev 6 June 1996 Features • Low capacitance. (C=2.0pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

smd zener diode color code

Abstract: smd glass zener diode color codes smd glass diode color codes 358B 8 PIN IC smd zener color codes Zener diode smd marking code .18 6G zener diode 10 pages project on zener diode colour code diode zener HRC0203A
Contextual Info: Diodes for Mobile Communications Application Note ADE-508-016 Rev.0 Aug. 2001 Hitachi Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in