2SC454 Search Results

2SC4542

Abstract: transistor 2SC4542
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)

Contextual Info: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25

2SC4544

Contextual Info: TO SH IBA 2SC4544 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSE TYPE PCT PROCESS 2SC4544 Unit in mm HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS COLOR TV HORIZONTAL DRIVER APPLICATIONS 10±0.3 r COLOR TV CHROMA OUTPUT APPLICATIONS o • • • High Voltage

2SC4169

Abstract: 2SC4547 37122
Contextual Info: Ordering number:EN3712 NPN Planar Silicon Darlington Transistor 2SC4547 85V/3A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SC4169] Features

Contextual Info: TO SH IB A 2SC4540 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 500mA) High Speed Switching Time : tgtg= 0.4,«s (Typ.)

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 o POWER AMPLIFIER APPLICATIONS o POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VcE(sat)=-0.5V(Max.) (Ic=1.5A) • High Speed Switching Time: t stg=0.5MS (Typ.) • Small Flat Package • Pc=l~2W (Mounted on Ceramic Sabstrate)

Contextual Info: Ordering num ber:EN 3712 SA\YO 2SC4547 %No.3712 NPN Planar Silicon Darlington Transistor i 85V/3A Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . F eatures •High DC current gain.

Contextual Info: SANKEN ELECTRIC CO LTD SSE D • QQ0101B 3SQ « S A K J - “1 Silicon NPN Tripla Diffuseci Planar ☆High Voltage Switching Transistor 2SC4546 Application Example : e Outline Drawing 4 . . F M 2 0 Switching Regulator,Lighting Inverter,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC4544 TRANSISTOR NPN TO-220 FEATURES 1. BASE High voltage: V (BR) CEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z High Breakdown Voltage z Excellent hFE Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC4544 TRANSISTOR NPN TO-220 FEATURES 1. BASE • High voltage: V (BR) CEO = 300 V 2. COLLECTOR • Small collector output capacitance: Cob=3.0pF (typ.) • Collector metal (fin) is fully covered with mold resin.

hxj 2038

Abstract: IC HXJ 2038 2SA17 2SC4548 3188 la 4548 RSN 3306 2SA1740 31883 ic 31883
Contextual Info: Ordering number: EN 3188 _ 2SA1740/2SC4548 PN P E pitaxial P lan ar Silicon T ransistor N PN Triple Diffused P la n ar Silicon T ransistor High-Voltage Driver Applications F e a tu r e s • High breakdow n voltage • Adoption of MBIT process •Excellent hpE lin earlity

2SA1735

Abstract: 2SC4540 005g
Contextual Info: TOSHIBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)

Contextual Info: 2SC4544- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS H IG H V O L T A G E S W I T C H I N G A N D A M P L I F I E R A P P L I C A T I O N S . Unit in m m C O L O R TV H O R I Z O N T A L D R I V E R A P P L I C A T I O N S . C O L O R TV C H R O M A O U T P U T A P P L I C A T I O N S .

2SC4543

Contextual Info: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 • Absolute Maximum Ratings +0.1 0.4±0.08 0.5±0.08 1.5±0.1 Ta=25˚C 2.5±0.1 45° +0.25 0.4max. ● High transition frequency fT. Small collector output capacitance Cob.

2SC4546

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

2SA1735

Abstract: 2SC4540
Contextual Info: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)

2SC4545

Contextual Info: Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo

Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)

MARKING 1F

Abstract: 2SC4543 transistor marking 1f 45MA160
Contextual Info: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 • Absolute Maximum Ratings +0.1 0.4±0.08 0.5±0.08 1.5±0.1 Ta=25˚C 2.5±0.1 45° +0.25 0.4max. ● High transition frequency fT. Small collector output capacitance Cob.

2SA1736

Abstract: 2SC4541
Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)

2SC4548

Contextual Info: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity