2SA1740 Search Results

hxj 2038

Abstract: IC HXJ 2038 2SA17 2SC4548 3188 la 4548 RSN 3306 2SA1740 31883 ic 31883
Contextual Info: Ordering number: EN 3188 _ 2SA1740/2SC4548 PN P E pitaxial P lan ar Silicon T ransistor N PN Triple Diffused P la n ar Silicon T ransistor High-Voltage Driver Applications F e a tu r e s • High breakdow n voltage • Adoption of MBIT process •Excellent hpE lin earlity

2SC4548

Contextual Info: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES *High breakdown voltage. *Excellent hFE linearity. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R www.unisonic.com.tw

2SA1740

Abstract: marking AK
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 1 2 3. EMITTER Marking: AK 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

SOT-89

Abstract: 2SA1740
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -200 mA ICM Collector-base voltage

marking AK

Contextual Info: 2SA1740 SOT-89 Transistor PNP SOT-89 1. BASE 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 B 3. EMITTER 3 2.6 4.25 2.4 3.75 Features — — 0.8 MIN High breadown voltage Excellent hFE linearlity 0.44 0.37 0.13 0.53 0.48 0.40 2x) 0.35 1.5 3.0 B Dimensions in inches and (millimeters)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES *High breakdown voltage. *Excellent hFE linearity. Lead-free: 2SA1740L Halogen-free:2SA1740G „ ORDERING INFORMATION Normal 2SA1740-x-AB3-R Ordering Number

Contextual Info: UTC 2SA1740 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES 1 *High breakdown voltage. *Excellent hFE linearity. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified PARAMETER SYMBOL

Contextual Info: SMD Type Product specification 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V

2SA1740

Abstract: 2SC4548 ITR04445
Contextual Info: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.

2SA1740

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400

transistor 2sa1740

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SA1740 PNP SILICON TRANSISTOR H I GH V OLT AGE DRI V ER APPLI CAT I ON ̈ FEAT U RES *High breakdown voltage. *Excellent hFE linearity. ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R

2SA1740

Contextual Info: 2SA1740 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

2SC4548

Abstract: 2SA1740
Contextual Info: 2SA1740 / 2SC4548 Ordering number : EN3188A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740 / 2SC4548 High-Voltage Driver Applications Features • • • High breakdown votlage.

2SA1740

Contextual Info: UTC 2SA1740 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES 1 *High breakdown voltage. *Excellent hFE linearity. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified PARAMETER SYMBOL

2SA1740

Abstract: hfe pnp transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES *High breakdown voltage. *Excellent hFE linearity. Lead-free: 2SA1740L Halogen-free:2SA1740G „ ORDERING INFORMATION Normal 2SA1740-x-AB3-R Ordering Number

QW-R204-026

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES *High breakdown voltage. *Excellent hFE linearity. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R www.unisonic.com.tw

2SC4548E

Abstract: 2SA1740 2SC4548 transistor 2sa1740
Contextual Info: Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.

AK marking

Abstract: SMD AK SMD BR 08 2SA1740
Contextual Info: Transistors SMD Type High-Voltage Driver Applications 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1740 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA1148

Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9

2SC4548

Abstract: 2SA1740 ITR04445 ITR04446
Contextual Info: 2SA1740 / 2SC4548 注文コード No. N 3 1 8 8 A 三洋半導体データシート 半導体ニューズ No.N3188 をさしかえてください。 2SA1740 / 2SC4548 PNP エピタキシァルプレーナ型シリコントランジスタ NPN 三重拡散プレーナ型シリコントランジスタ

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers