2SA124 Search Results

Contextual Info: i TOSHIBA 2SA124A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. &811AX. FEATURES: . Low Collector Saturation Voltage : vCE(sat)*“0.4V(Max.) at Ic*-3A . High Speed Switching Time : tstg=1.0/<s(Typ.)

Contextual Info: T O S H IB A 2SA1244 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process * High Current Switching Applications s rJ- Features CM Ö •H • Low Collector Saturation Voltage " V ce (Sat) = -0.4 V (Max.) at lc = -3A • High Speed Switching Time

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1249

Abstract: 2SC3117
Contextual Info: JMnic Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SC3117 ・High breakdown voltage ・Large current capacity APPLICATIONS ・For color TV sound output,converters, Inverters applications

MARKING MD

Abstract: 2SA1245
Contextual Info: Transistors IC SMD Type Silicon Pnp Epitaxial Planar Type 2SA1245 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

width10ms

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1242 STROBO FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX. FEATURES: . hFE=100~ 320 VCe =-2V, Ic =-0.5A . hFE=70(Min.) (Vc e =-2V, Ic=-4A) . Low Collector Saturation Voltage : VcE(sat)=~l-OV(Max.) (Ic=-4A, Ib =-0.1A)

2SA1249

Abstract: 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311
Contextual Info: Inchange Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications

2SA1242

Abstract: A1242
Contextual Info: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)

A1242

Abstract: 2SA1242 transistor A1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

2SA1249

Abstract: 2SC3117
Contextual Info: SavantIC Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications

Contextual Info: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage

2SA1241

Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )

2SA1244

Contextual Info: 2SA1244 TO SHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = - 0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /¿s (Typ.)

Contextual Info: Ordering number : EN1060B I s a m y o i 2SA1249/2SC3117 NO.1060B P N P /N P N E p ita x ial P la n a r Silicon T ran sisto rs 160V/1.5A Switching Applications I U ses • Color TV sound ou tput, converters, in v e rters F e a tu r e s - H igh breakdow n voltage

Contextual Info: Jeiizu ioducti, One, C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1249 DESCRIPTION • High Collector-Emitter Breakdown Voltage: V (B R)CEo=-160V(Min) • Large Current Capacity

2SA1247

Abstract: 2SC3115 Gv-80
Contextual Info: NEC Y S ilico n T ra n s is to r '> ‘J =3 > m = F = r i\ r x 2SA1247 P # N P b i + ! mm « OiB, ISffiXr 1 / i « 3 y h n —; u r >*7— T v-?<r> m ìa i t lT s a -c -fo o aitl±, /J'#!:, B hFEt£<T)X’MiàfS?â*5c#14io t <"ti tz r -i -f-1 •v9u> : -120

transistor a1241

Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029
Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)

2SA124

Abstract: 2SA1248 2SC3116 ITR03053
Contextual Info: Ordering number:ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009B Features [2SA1248/2SC3116] · High breakdown voltage.

A1244

Abstract: 2SA1244 2SC3074
Contextual Info: 2SA1244 TO SH IBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A High Speed Switching Time : tstg = 1.0 /us (Typ.)

transistor a1241

Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

2SA1241

Abstract: 2SC3076
Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)

transistor A1242

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

2SA1248

Abstract: 2SC3116
Contextual Info: Ordering number:EN1032A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009A Features [2SA1248/2SC3116] · High breakdown voltage.