PN3639 Search Results

PN3639

Abstract: PN3640
Contextual Info: 'iM F H i M ìì Central PN3639 PN36*K Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors PNP SILICON TRANSISTOR JEDEC TO-92 CASE (EBC) DESCRIPTION

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

Contextual Info: PN3639 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)80m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10nx @V(CBO) (V) (Test Condition)

NS3762

Abstract: PN4258
Contextual Info: {DISCRETE} £> 3 2 CM CO CM CM in to ICO 100 100 90 co o CO 20 20 10 o o o § 300 250 0 ID CO CO CO 25 o 30 o o CO > o o • »J o c 1- 40Ö , o o s t i l l 0 ■> U3 c ▼* <0 (£> - 5 O S- O C PJ ! S CO 3 0 c T- O * if > in CM 0 I o r - Ci o c 00 r- id

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N3859

Contextual Info: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )

2N5381

Abstract: 2N2926 transistors TO-92 case 2N3707
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

lm2311

Abstract: 2N3546 PN2369 EQUIVALENT 2N3639 4N32 pinout "1N6263" AM79865 1N6263 2N2369 C6 FTP
Contextual Info: Advanced Micro Devices FDDI on Copper with AMD PHY Components by Eugen Gershon Publication # 15923 Rev. Amendment A /0 Issue Date 6/91  1991 Advanced Micro Devices, Inc. FDDI on Copper with AMD PHY Components by Eugen Gershon and pin-out compatible with the MIC device found on

Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2n5963

Contextual Info: I Sm all Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEA D VcBO v CEO v EBO V (V ) (V ) 'C B O hFE p V CBC v CE @ IC (V ) (m A ) V C E ( S A T ) ® !C C 0b »T NF to ff CODE (V ) (V ) (m A ) *< CES *VC E S 2N2712 NPN A M PU SW ITCH ECB

2N3639

Contextual Info: NATL SEMICOND DISCRETE H E D | t,SG1 1 3 a 0 a 3 7 Gt .t 2 | This Material Copyrighted By Its Respective Manufacturer T-37-OI Continued Ic e s * •cBOffiVcB ("A ) (V) Max TO-92 (92) 12 TO-92 (92) 12 TO-92 (92 12 PN5140 TO-92 (92) 5 5 4 50* PN5910 TO-92

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

BEC npn

Abstract: switch NPN
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB CODE (nA) (V) (V) (V) *ICES (V) *VCES *ICEV MIN MIN MIN MAX EBC 40 40* 10 100 30 hFE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff MIN 10,000 MAX -

PN3634

Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO VCB vi M IN I V I M IN IV I M IN | m A I M A X (V I HFE <§> \?C & 1C M IN M AX COB ( p i M A X FT (V I Im A I 10 10 10 10 150 150 20 20 8 8 10 10 250 250 15 15 1 500 3 10 1 500 1 500 e 2 12 5.5 25 25 1 150 500

tpn3643

Abstract: MPS3640 PN3641 27424 MPS3639 MPS3638 MPS3638A PN3638 PN3638A PN3643
Contextual Info: FAIRCHILD SEM ICONDUCTOR 34 3469674 FAIRCHILD SEMICONDUCTOR PN/MPS/FTS03638 PN/M PS/FTS03638A f a ir c h il d iS S S S S S t • • • • J7' ^ PNP Small Signal General Purpose Amplifiers & Switches PACKAGE PN3638 PN3638A MPS3638 MPS3638A FTS03638 FTS03638A

MPSA94

Abstract: MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45 MPSA55
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @ VCE @ IC VCE (SAT) @ IC Cob fT NF toff CODE (V) MPSA25 NPN DARLINGTON EBC MIN 40 (V) *VCES MIN 40* 30 *hFE (1kHZ) MIN MAX 10,000 - 5.0 100 1.50

sC3228

Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB

PN3568

Abstract: MPSA65 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @ VCE @ IC VCE (SAT) @ IC Cob fT NF toff CODE (V) MPSA25 NPN DARLINGTON EBC MIN 40 (V) *VCES MIN 40* 30 *hFE (1kHZ) MIN MAX 10,000 - 5.0 100 1.50