MPS3638A Search Results

MPS3638A

Abstract: MPS-3638A
Contextual Info: MPS3638A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Absolute Maximum Ratings Ta = 25 OC Parameter 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage -VCBO

2N4402

Abstract: MPS3638A MPS3638A motorola MOTOROLA MPS3638A MPS-3638A
Contextual Info: MOTOROLA Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage

MPS3638

Abstract: MPS3638A
Contextual Info: G E SO LID QÌ S TA TE 3875081 6 E SOLID STATE pF|3fl?SQfil O D l T T T ñ D ï~~ 01E 17978 D Signal MPS3638, MPS3638A Silicon Transistors

BC547 hie hre hfe

Abstract: hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage

MPS-3638A

Abstract: mps3638a
Contextual Info: ON Semiconductort MPS3638A Switching Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit VCEO −25 Vdc Collector −Emitter Voltage VCES −25 Vdc Collector −Base Voltage VCBO −25 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous

MPS3638A

Abstract: 2N4402
Contextual Info: ON Semiconductort MPS3638A Switching Transistor PNP Silicon w This device is available in Pb−free package s . Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or

TE 2549 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3638A PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol Value Unit Vdc V dc VCEO -2 5 C o lle c to r-E m itte r Voltage VCES -2 5 C o lle c to r-B a s e Voltage

tpn3643

Abstract: MPS3640 PN3641 27424 MPS3639 MPS3638 MPS3638A PN3638 PN3638A PN3643
Contextual Info: FAIRCHILD SEM ICONDUCTOR 34 3469674 FAIRCHILD SEMICONDUCTOR PN/MPS/FTS03638 PN/M PS/FTS03638A f a ir c h il d iS S S S S S t • • • • J7' ^ PNP Small Signal General Purpose Amplifiers & Switches PACKAGE PN3638 PN3638A MPS3638 MPS3638A FTS03638 FTS03638A

MPS-3638A

Abstract: 2N4402 MPS3638A
Contextual Info: ON Semiconductort MPS3638A Switching Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –25 Vdc Collector–Emitter Voltage VCES –25 Vdc Collector–Base Voltage VCBO –25 Vdc Emitter–Base Voltage VEBO –4.0

2N3638

Abstract: 2N3638A MPS-3638A MPS3638A NT 407 F MPS3638 2N3638/A "2n3638"
Contextual Info: MPS3638 silicon MPS3638A NPN SILICON A N N U LA R TRANSISTORS . designed for high-current switching applications. NPN SILICON Collector-Emitter Sustaining Voltage — VCEQ(sus) = 25 Vdc (Min) SWITCHING TRANSISTORS DC Current Gain Specified — 1.0 mAdc to 300 mAdc

PS3638

Contextual Info: MOTOROLA Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA S w itching Transistor M PS3638A PNP Silicon COLLECTOR 3 / EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO -2 5 V dc C o lle c to r-E m itte r V oltag e

Contextual Info: G E SOLID 01 S T ATE 3875081 G E SOLID STATE d F | b û ? S O Ô 1 QOlTTTñ 01E Signal Transistors 17978 -p- ¿ î D - f ‘ MPS3638, MPS3638A Silicon Transistors TO-92 The GE/R CA M PS3638 and 3638A are planar epitaxial passivated PNP silicon transistors intended for general

Contextual Info: ON Semiconductort MPS3638A Switching Transistor PNP Silicon w This device is available in Pb−free package s . Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or

BC158B

Abstract: BC158A LOW-POWER SILICON PNP 2SA677 2SA628 226M 2SA550
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 PN6076 V761 2SA628 L9015 L9015 MPS6172 BC186 MPS3638A BCX18 BCX18R Manufacturer CentralSemi SGS-Ates Solid Stlnc Semi Inc Advncd Semi Motorola See Index See Index See Index FerrantiLtd

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

GES5822

Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007

GES2222A

Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

pnp 2N3906 beta

Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30