MPS4250 Search Results

MPS4250G

Abstract: MPS4250 mps 444
Contextual Info: MPS4250 Transistor PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Emitter Voltage VCES −40 Vdc Collector −Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS4250A I ME 0 J v 'ìb m M a QG07320 *1 | PNP EPITAXIAL SILICON TRANSISTOR -f Î-29-15 AMPLIFIER TRANSISTOR TO-92 • Collector-Emltter Voltage: Vc*o=60V • Collector Dissipation: Pc max =200mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPS4250G

Abstract: MPS4250 transistor mps 4250
Contextual Info: MPS4250 Transistor PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Emitter Voltage VCES −40 Vdc Collector −Base Voltage

MPS4250 equivalent

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS4250 14E 0 | 7 e,tM1.l!.a °.0 0 7 3 1 '1 5 I PNP EPITAXIAL SILICON TRANSISTOR T -2 9-1 5 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =40V • Collector Dissipation: Pc (max =200mW ABSOLUTE MAXIMUM RATINGS .(Ta=25°C)

MPS4249

Contextual Info: MPS4249 MPS4250 M AXIM U M RATINGS Rating Symbol MPS4250 MPS4249 Unit C o llector-E m itter Voltage VCEO -4 0 -6 0 Vdc C o llector-E m itter Voltage VCES -4 0 -6 0 Vdc C ollector-Base Voltage v CBO -4 0 -6 0 Vdc Em itter-Base Voltage vebo -5 .0 - 5 .0 Vdc

mps4250

Abstract: MPS4250A TL 2336 MPS4249
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3t.?254 OGflfciOTl M | T '2 < 1 - X \ MPS4249 MPS4250 M A X IM U M R A T IN G S Symbol Rating MPS4249 MPS4250 MPS4250A Unit Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Emitter Voltage VCES 40 60 Vdc Collector-Base Voltage

2N4250 motorola

Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a

MPS4250A

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS4250A IME Jv 'ìb m M a QG07320 *1 | PNP EPITAXIAL SILICON TRANSISTOR - f Î-29-15 AMPLIFIER TRANSISTOR TO-92 • Collector-Emltter Voltage: Vc*o=60V • Collector Dissipation: Pc max =200mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPS4250G

Abstract: AYWW marking code IC MPS4250ARLRMG MPS4250 MPS4250ARLRM
Contextual Info: MPS4250 Transistor PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Emitter Voltage VCES −40 Vdc Collector −Base Voltage

MPS4250

Contextual Info: MOTOROLA Order this document by MPS4250/D SEMICONDUCTOR TECHNICAL DATA Transistor MPS4250 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Emitter Voltage VCES

SS9014

Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A
Contextual Info: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Transistor MPS4250 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO -40 Vdc Collector-Emitter Voltage VCES -40 Vdc Collector-Base Voltage VCBO ^0 Vdc Emitter-Base Voltage

BC237

Abstract: Transistor BC107 PLASTIC PACKAGE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Transistor MPS4250 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating CASE 29–04, STYLE 1 TO–92 TO–226AA Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Emitter Voltage

MPS4250

Abstract: 20LC20
Contextual Info: SAM SUNG SEM ICO N D U CT O R IN C MPS4250 14 E 0 1 7 *1 ^ 1 4 2 q 0 0 ?3 1 1 2 | PNP EPITAXIAL SILICON TRANSISTOR r T-29-15 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =200mW ABSOLUTE MAXIMUM RATINGS .(Ta=25°C)

MPS4250

Contextual Info: Transistor MPS4250 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Emitter Voltage VCES –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

MPS42

Abstract: MPS4250G MPS4250
Contextual Info: MPS4250 Transistor PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Emitter Voltage VCES −40 Vdc Collector −Base Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MPS42

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T ransistor M PS4 2 50 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Voltage Rating VCEO -4 0 Vdc C ollector-E m itter Voltage VCES -AO Vdc VCBO -4 0 Vdc vebo -5 .0 Vdc - mAdc