BC308 Search Results

BC308

Abstract: KBC308 Grade
Contextual Info: SEMICONDUCTOR BC308 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 B BC308 2. Marking 4 Item Marking Description Device Name BC308 BC308 Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week KEC K KEC CORP.

BC307B

Abstract: BC307 BC307C 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

T BC309

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307

BC307B

Abstract: BC306C BC307C BC307 BC308C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC307 BC307B BC307C BC308C Amplifier Transistors PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector-Base Voltage Symbol BC307, B, C BC306C Unit VCEO -45 -25 Vdc VCBO -50 -30 Vdc

BC307

Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9

bc307

Abstract: BC308
Contextual Info: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous

BC307

Abstract: BC307B BC307C BC308C BC307 Motorola
Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

Characteristic curve BC107

Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage

CBC307B

Abstract: C307B C307 307c BC307 BC307B T BC309
Contextual Info: BC307,B,C BC308C BC309,B MAXIMUM RATINGS Symbol BC307 BC308C BC309 C o lle c to r -E m itte r V o lta g e VCEO -4 5 -2 5 -2 5 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -3 0 -3 0 V dc Rating CASE 29-04, STYLE 17 TO-92 TO-226AA vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s

BC308

Contextual Info: Transistors BC308 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Collector-Em itter Voltage VcES Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) Collector Dissipation

BC307

Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309

Contextual Info: FORWARD UnEKHAUONAL ELECTRONICS LID. BC308 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS at Tamb=25'c C haracteristic Collector-Emitter Voltage Collector-Emitter Voltage B atter-B ase Voltage

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

309B

Abstract: BC306C C308C bc307b
Contextual Info: BC307,B,C BC308C BC309B MAXIMUM RATINGS Sym bol BC307 BC308C BC309 Unit C o llecto r-Em itter Voltage VCEO -4 5 -25 -2 5 Vdc C o llecto r-Base Voltage VCBO -5 0 -30 -3 0 E m itter-B ase Vo ltage v ebo Rating Vdc - 5 .0 Vdc CASE 29-04, STYLE 17 TO-92 TO-226AA

BC307D

Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola
Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25

BC336

Abstract: bc451 BC318 BC382L BC335 BC269 BC317
Contextual Info: Low Level and General Purpose Amplifiers MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE BC267 BC268 BC269 BC280 BC282 N N N N N BC283 BC307 BC308 BC309 BC315 Ic mA Veto (V) TO-18 TO-18 TO-18 TO-18 TO-18 400 400 400 360 400 1000 1000 1000 100 600 45 20 30 40 30

BC307

Abstract: BC308 PNP transistor download datasheet BC308
Contextual Info: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30

SS9014

Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A
Contextual Info: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio

BC307B

Abstract: BC307 BC308C 308C BC307C BC308
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

BC307B

Abstract: BC307 BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

TYP 513 309

Abstract: GE-514
Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309

Contextual Info: BC308VI18 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BC308

Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
Contextual Info: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.