309B Search Results

Contextual Info: Siliconix DG308B/309B AMember of the TBMic Group Improved Quad CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • • • ± 22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—ros on : 45 Q

DG308B

Abstract: DG308BDJ DG308BDY DG309B DG309BDJ 309B
Contextual Info: DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower

pf0045a

Abstract: PF0045
Contextual Info: H ITACH I PF0045A/PF0065A MOS FET Power Amplifier Module for AMPS Handy Phone HITACHI ADE-208-309B Z Preliminary 3rd. Edition July 1996 Features • High efficiency PF0045A: 58 % Typ at 1.2 W PF0065A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V •

309B

Abstract: 70047
Contextual Info: DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches FEATURES BENEFITS APPLICATIONS • ± 2 2 -V Supply Voltage Rating • CMOS Compatible Logic • Low On-Resistance— iDS on : 45 Q • • • • • • • • • • • • • • •

309B

Abstract: DG309BDY DG308BDJ
Contextual Info: DG308B/309B Improved Quad CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • • • • ± 22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS on : 45 £2 Low Leakage—lD(on): 20 pA

X-1000

Abstract: DG308B DG308BDJ DG308BDQ DG308BDY DG309B DG309BDJ DG309BDY
Contextual Info: DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D D "22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS on : 45 W Low Leakage—ID(on): 20 pA Single Supply Operation Possible

Contextual Info: SC11309 309B Equalizer SIERRA SEMICONDUCTOR GENERAL DESCRIPTION FEATURES The SCI1309 is a digitally program­ mable monolithic 309B-type Line Amplitude Equalizer consisting of a lst-order lead-lag filter whose pole and zero can be programmed for compensating loaded and non­

PF0045A

Abstract: BL01RN1-A62 vapc PF0065A Hitachi DSA00309
Contextual Info: PF0045A/PF0065A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-309B Z Preliminary 3rd. Edition July 1996 Features • High efficiency PF0045A: 58 % Typ at 1.2 W PF0065A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input

DG308B

Abstract: DG308BDJ DG308BDQ DG308BDY DG309B DG309BDJ DG309BDY 309B
Contextual Info: DG308B/309B Improved Quad CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D D "22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS on : 45 W Low Leakage—ID(on): 20 pA Single Supply Operation Possible

Contextual Info: PF0045A/PF0065A MOS FET Power Amplifier Module for AMPS Handy Phone HITACHI ADE-208-309B Z Preliminary 3rd. Edition July 1996 Features • High efficiency PF0045A: 58 % Typ at 1.2 W PF0065A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input

309b

Abstract: DG308BDJ DG308B DG308BDY DG309B DG309BDJ
Contextual Info: DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower

309BD

Contextual Info: T em ic DG308B/309B S e m i c o n d u c t o r s Improved Quad CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • • • • ± 22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance— rDS 0n : 45 Q

309b

Abstract: SC11309
Contextual Info: j K SC11309 309B Equalizer SIERRA SEMICONDUCTOR The SC11309 is a digitally program­ mable monolithic 309B-type Line Amplitude Equalizer consisting of a lst-order lead-lag filter whose pole and zero can be programmed for compensating loaded and non­ loaded cable. This section provides

DG308B

Abstract: DG308BDJ DG308BDQ DG308BDY DG309B DG309BDJ DG309BDY
Contextual Info: DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D D "22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS on : 45 W Low Leakage—ID(on): 20 pA Single Supply Operation Possible

DG308BDJ

Abstract: DG308B DG308BDQ DG308BDY DG309B DG309BDJ DG309BDY
Contextual Info: DG308B/309B Improved Quad CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D D "22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS on : 45 W Low Leakage—ID(on): 20 pA Single Supply Operation Possible

Hitachi DSA002719

Abstract: vapc
Contextual Info: PF0045A/PF0065A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-309B Z Preliminary 3rd. Edition July 1996 Features • High efficiency PF0045A: 58 % Typ at 1.2 W PF0065A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input

d699

Abstract: DG201B DG308B DG308BAK DG308BDJ DG308BDY DG309B DG309BDJ DG309BDY 309B
Contextual Info: DG308B/309B Siliconix Improved Quad CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D "22ĆV Supply Voltage Rating CMOS Compatible Logic Low OnĆResistanceĊrDS on : 45 W Low LeakageĊID(on): 20 pA Single Supply Operation Possible

309b

Abstract: DG308B DG308BDJ DG308BDY DG309B DG309BDJ DG309BDY
Contextual Info: Siliconix DG308B/309B AM em ber of the TEMIC Group Improved Quad CMOS Analog Switches Features ± 22-V Supply V oltage Rating C M O S C om patible Logic Low O n-R esistance— rDS<on : 4-5 C2 Low Leakage— Io on): 20 p A Single Supply O p eratio n Possible

s4 vishay

Abstract: DG308B DG308BDJ DG308BDQ DG308BDY DG309B DG309BDJ DG309BDY
Contextual Info: DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D D "22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS on : 45 W Low Leakage—ID(on): 20 pA Single Supply Operation Possible

309B

Contextual Info: Tem ic DG308B/309B S e m i c o n d u c t o r s Improved Quad CMOS Analog Switches Features Benefits Applications • • W ide A nalog Signal R ange • Sim ple Logic Interface • Industrial Instrum entation • CM O S Com patible Logic • Low O n-R esistance— ros on : 45 Q

309b

Abstract: Hitachi DSA0076 HD74HC00 HD74HC1G00
Contextual Info: HD74HC1G00 2–input NAND Gate ADE-205-309B Z 3rd. Edition April 2001 Description The HD74HC1G00 is high speed CMOS two input NAND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of

s4 vishay

Abstract: 15-V DG308A DG308ACJ DG308ADY DG309 DG309CJ
Contextual Info: DG308A/DG309 Vishay Siliconix Quad Monolithic SPST CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Portable and Battery Powered Instrumentation D Communication Systems D Computer Peripherals D High-Speed Multiplexing "15-V Analog Input Range

2sa925

Abstract: 2SC1901 2SA905 138B 309B
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

DG308A

Abstract: DG308ACJ DG309 DG309CJ
Contextual Info: DG308A/DG309 Vishay Siliconix Quad Monolithic SPST CMOS Analog Switches DESCRIPTION FEATURES Featuring low on-resistance 60 Ω and fast switching (130 ns), the DG308A is supplied in the “normally open” configuration while DG309 is supplied “normally closed”.