VAPC Search Results

vapc

Abstract: BL01RN1-A62 PF0231A ADE-208-378A Hitachi DSA0046
Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

RFFM6403PCK-410

Abstract: RFFM6403SB DS130402 RFFM6403 RFFM6403SR
Contextual Info: RFFM6403 2.5V TO 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm 22 GND 21 GND 20 TX PA CTL LOGIC EN 3 BYP 4 19 GND VAPC 5 18 RX GND 6 17 VCC_RX ANT 7 16 NC GND 8 15 GND LNA 9 10 11 12 13 14

APC 600 Va

Contextual Info: HITACHI PF0231 MOS FET Power Amplifier Module for ADC Handy Phone HITACHI ADE-208-283D Z Preliminary 5th. Edition July 1996 Application For ADC class3 824 to 849 MHz Features • High efficiency: 47% Typ for CW 43% Typ for n/4-DQPSK • Simple Pout control: Controllable by VAPC

F0231-A

Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone HITACHI Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for Jt/4-DQPSK • Simple Pout control: Controllable by VAPC •

BL01RN1-A62

Abstract: vapc PF0231A Hitachi DSA00310
Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd. Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

T30F

Contextual Info: PF0231-MOS FET Power Amplifier Module for ADC Handy Phone Application Pin Arrangement For ADC class3 824 to 849 MHz Features • High Efficiency: 47% typ. for CW 43% typ. for n/4-DQPSK • Simple Pout Control: Controllable by VAPC • Low Power Control Current: 600 iA Typ.

Hitachi DSA002719

Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

PF0231A

Abstract: BL01RN1-A62-001
Contextual Info: HITACHI PF0231A MOS FET Power Amplifier Module for ADC Handy Phone HITACHI Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for rc/4-DQPSK • Simple Pout control: Controllable by VAPC

Contextual Info: TO SHIBA S-AU70 TOSHIBA RF POWER AMPLIFIER MODULE ç- a 117 n 800MHz UHF POWER AMPLIFIER MODULE AMPS Weight : 18g MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC DC Supply Voltage vdd DC Supply Voltage VAPC Input Power Pi Operating Case Temperature Range T£ (

7436 ic

Contextual Info: TLV2460, TLV2461, TLV2462, TLV2463, TLV2464, TLV2465 FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS220F – JULY 1998 – REVISED OCTOBER 1999 D D D D D D D D D D D D TLV2460 DBV PACKAGE TOP VIEW Input Common-Mode Range Exceeds Both

SLOS245

Contextual Info: TLV2780, TLV2781, TLV2782, TLV2783, TLV2784, TLV2785, TLV278xA FAMILY OF 1.8 V HIGH-SPEED RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS245 – MARCH 2000 D D D D D D D D D D TLV2782 D, DGK, OR P PACKAGE TOP VIEW Supply Voltage Range . . . 1.8 V to 3.6 V

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: RF3160 Preliminary 2 DUAL-BAND GSM/DCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM/DCS Handsets • GPRS Compatible • Commercial and Consumer Systems • GSM, E-GSM and DCS Products 2 Product Description 2.286 + 0.051 The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input

Contextual Info: RF3110 Preliminary 2 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM Handsets • GSM, E-GSM and DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible 2 POWER AMPLIFIERS • Portable Battery-Powered Equipment

RF2172PCBA410

Abstract: vapc IPC-SM-782 RF2172 RF2172PCBA411
Contextual Info: RF2172 ISM BAND 3.6V, 250mW AMP WITH ANALOG GAIN CONTROL RoHS Compliant and Pb-Free Product Package Style: QFN, 16-Pin, 4x4 „ „ „ „ „ „ GND VCC GND GND 14 13 GND 2 12 RF OUT RF IN 3 11 RF OUT Bias GND 4 Applications „ 15 BluetoothTM PA 2.4GHz to 2.5GHz ISM Band

AN3592K

Abstract: AN3592S phase shift detector V01D
Contextual Info: AN3592K, AN3592S AN 3592K, AN3592S P A L V T R Ï E Î I I Ï S / P A L V T R J u m p i n g C o r r e c t i o n C ir c u its • let AN3592K w A N 3592K , A N 3 5 9 2 S !i, PA LA 'iSV TR tfO L Pi - m & Unit : mm K t t W S W U ft m • A N 3592K , A N 3 5 9 2 S i; ; ^ } * iig £■ff L T i ‘ 5 ,

Contextual Info: TLV2460, TLV2461, TLV2462, TLV2463, TLV2464, TLV2465, TLV246xA FAMILY OF LOWĆPOWER RAILĆTOĆRAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 D D D D D D D D D D TLV2460 DBV PACKAGE TOP VIEW Rail-to-Rail Output Swing

Contextual Info: PF0030 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 fiA • Thin Package: 5mm ■ ORDERING INFORMATION P art No. Operating Frequency PF0030 824 to 849 M H z AMPS PF0032 872 to 905 M H z

PF0414B

Contextual Info: PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-432C Z 4th Edition December 1997 Application For DCS 1800 classl 1710 to 1785 MHz. Features • 3stage amplifier : 0 dBm input • Lead less thin & small package : 2 mm Max & 0.2cc

Contextual Info: PF0027- Preliminary MOS FET Power Amplifier Module for E-TACS Handy Phone • FEATURES OUTLINE DRAWING Unit: mm • Surface Mounted Small Package with Shielded C over. 1cc, 3g

Contextual Info: PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone HITACHI ADE-208-102E Z Preliminary 6th. Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for jt/4-DQPSK • Low input power: 0 dBm ave. Typ for % /4-DQPSK • Simple bias circuit

Contextual Info: PF0040 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 /xA • Thin Pack ag e: 5 mmt ■ ORDERING INFORMATION Part No. Operating Frequency PF0040 824 to 849 MHz AMPS PFÜ042 872 to 905 MHz

Hitachi DSA0099

Abstract: pf01411b
Contextual Info: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input

2sd879 equivalent

Abstract: laser diode vcd LB8118M block diagram of VCD and its functions
Contextual Info: Ordering number: ENN5838A Monolithic Digital IC LB8118M Actuator Driver for Portable CD Players Package Dimensions The LB8118M is an actuator driver IC designed for portable CD players that operate at 2.4 V two Ni-Cd batteries or 3.0 V (two dry cells). Because the fourchannel driver control outputs are divided into two groups,