475MHZ Search Results

Ctr32

Contextual Info: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm        Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output

RFFM6403PCK-410

Abstract: RFFM6403SB DS130402 RFFM6403 RFFM6403SR
Contextual Info: RFFM6403 2.5V TO 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm 22 GND 21 GND 20 TX PA CTL LOGIC EN 3 BYP 4 19 GND VAPC 5 18 RX GND 6 17 VCC_RX ANT 7 16 NC GND 8 15 GND LNA 9 10 11 12 13 14

RFFM6403PCBA-410

Abstract: RFFM6403
Contextual Info: RFFM6403 Preliminary 2.5V TO 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm EN Integrated 50 Input/Output Match Tx Output Power: 30dBm Single 50 Bi-directional Transceiver Interface Integrated PA, filtering LNA

Contextual Info: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm        Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output

475MHZ

Contextual Info: Voltage Controlled Oscillators MW500-1738 340MHz to 475MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 340MHz to 475MHz 0.5/5 V 4 +/- 2 dBm 10 kHz Offset -98 typ dBc/Hz 100 kHz Offset -118 (typ) dBc/Hz Frequency Pushing 5 MHz/V Frequency Pulling

Contextual Info: JXWBLB-T-BP-475-5/T-4CS 475MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-475-5/T-4CS 1 JXWBLB-T-BP-475-5/T-4CS 475MHz Cavity Band Pass Filter Technical Specification 475 Center Frequency f0 ( MHz) 5 3dB Bandwidth(MHz)

TA1113A

Contextual Info: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 475MHz Part No: MP03079 Model: TA1113A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage: 5V

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

SY10E016

Abstract: MC10H016 SY100E016
Contextual Info: 8-BIT SYNCHRONOUS BINARY UP COUNTER SY10E016 SY100E016 DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The SY10/100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

SY10E016

Contextual Info: SY10E016 SY100E016 FINAL 8-BIT SYNCHRONOUS BINARY UP COUNTER DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The SY10/100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com= SAW Filter 390MHz Part No: MP01620 Model: TA0376A REV. NO: 1 A. MAXIMUM RATING: 1. DC voltage: 12V 2. Operating Temperature: -35°C to +85°C

Contextual Info: RF2057 RF2057High Performance Wideband RF PLL/VCO with Integrated RF Mixers For Repeaters HIGH PERFORMANCE WIDEBAND RF PLL/VCO WITH INTEGRATED RF MIXERS FOR REPEATERS Package: QFN, 32-Pin, 5mmx5mm VCO Features  Fractional-N Synthesizer  Low Phase Noise VCO

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

LDB182G5010G-120

Abstract: LDB181G8115G-120 LDB21869M10C-001 LDB185G3710G-120 LDB182G4510G-120 LDB182g5010 LDB182G5005G-120 LDB21869M LDB181G9505C-110 LDB182G4510C-110
Contextual Info: Microwave Components/Modules Chip Multilayer Hybrid Baluns 4 (5) (6) Directional Input Mark 0.2±0.1 +0.10 0.20 -0.15 LDB18 Series 0.3±0.1 0.50±0.05 (3) G Type (1) : Unbalance port (2)(5) : GND (3)(4) : Balance port (6) : NC 0.20±0.1 Microwave Components/Modules

intel PC MOTHERBOARD CIRCUIT diagram x86 family 6 model 7 stepping 3

Contextual Info: Preliminary Information AMD-K6-2 Processor Data Sheet 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. "AMD" products. AMD makes no representations or warranties with

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com= SAW Filter 390MHz Part No: MP01620 Model: TA0376A Rev No: 1 A. MAXIMUM RATING: 1. DC voltage: 12V 2. Operating Temperature: -35°C to +85°C

RF6569

Abstract: RFFM6403 RFFM6903 RF6555 2sp3 RF6545 RFFM6201 RF6505 RF6535 928 MHZ pa
Contextual Info: RFMD. Smart Energy: Advanced Metering Infrastructure AMI and ZigBee Front End Module Portfolio The RFMD® portfolio of single-chip integrated front end The RF65x4 and RFFM640x integrate a 470MHz high-power modules (FEMs) is developed for high performance AMI and

LDB182G4520C-110

Abstract: ldb18 LDB211G9005C-001 LDB215G3710C-001 LDB181G8405C-110 LDB211G9020C-001 LDB212G4005C-001 LDB21924M05C-001 LDB181G8420C-110 LDB181G8820C-110
Contextual Info: Microwave Components 05.11.18 Chip Multilayer Hybrid Baluns Chip Multilayer Hybrid Baluns 1.6±0.1 4 (5) (6) 0.20±0.1 0.2±0.1 +0.10 0.20 -0.15 (2) (1) 1.25±0.1 (1) (3) 0.8±0.1 (2) 0.15±0.10 (3) 0.95±0.1 2.00±0.1 0.6±0.1 Directional Input Mark 0.3±0.1

Contextual Info: * 8-BIT SYNCHRONOUS BINARY UP COUNTER SYNERGY SY10E016 SY100E016 SEMICONDUCTOR DESCRIPTION FEATURES • 700MHz min. count frequency ■ Extended 100E V ee range of - 4 .2 V to - 5 .5 V ■ 1000ps CLK to Q, TC ■ Internal, gated TC feedback ■ 8 bits wide

LDB21869M10C-001

Abstract: LDB21 LDB212G4010C001 LDB182G4510G LDB212G4010C-001 LDB21869M LDB182G4505C-110
Contextual Info: Microwave Components/Modules Chip Multilayer Hybrid Baluns 4 (5) (6) Directional Input Mark 0.2±0.1 +0.10 0.20 -0.15 LDB18 Series 0.3±0.1 0.50±0.05 (3) G Type (1) : Unbalance port (2)(5) : GND (3)(4) : Balance port (6) : NC 0.20±0.1 Microwave Components/Modules

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCMO1545 WIDE BANDWIDTH 150 - 450 MHz Phase Noise Phase Noise dBc/Hz FEATURES: ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free REL-PRO Technology -30 -40 -50 -60 -70

Contextual Info: 8-BIT SYNCHRONOUS BINARY UP COUNTER SYNERGY SY10E016 SY100E016 SEMICONDUCTOR FEATURES • ■ 700M Hz min. count frequency ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 1000ps CLK to Q, TC ■ Internal, gated TC feedback ■ 8 bits wide ■ Fully synchronous counting and TC generation

Contextual Info: * 8-BIT SYNCHRONOUS BINARY UP COUNTER SYNERGY SY10E016 SY100E016 SEMICONDUCTOR FEATURES DESCRIPTION The SY10E016 and SY100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture and operation are the same as the