485MHZ Search Results

485MHz

Abstract: JXWBLB-T-BP-485-5
Contextual Info: JXWBLB-T-BP-485-5/T-4CS 485MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-485-5/T-4CS 1 JXWBLB-T-BP-485-5/T-4CS 485MHz Cavity Band Pass Filter Technical Specification 485 Center Frequency f0 ( MHz) 5 3dB Bandwidth(MHz)

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

toko a50

Abstract: 1820-2000 WBC1-1TL DC1027A LT5568
Contextual Info: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Up or Downconverting Applications Noise Figure: 9.3dB Typical at 900MHz Output Conversion Gain: 2.4dB Typical IIP3: 9dBm Typical at ICC = 10mA Adjustable Supply Current: 4mA to 13.4mA

TN4-26011

Abstract: crystal oscillator 850mhz N04 U1 MICRF505 MICRF506 TSX-10A differential feed loop antenna
Contextual Info: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR

437MHz

Abstract: 447MHZ MA08247 TB0205A 4514
Contextual Info: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 452.70MHz Part No: MA08247 Model: TB0205A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40°C to 85°C

Contextual Info: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR

DF765S32B

Contextual Info: DIELECTRIC FILTER SPECIFICATION China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: DF765S32B www.sipatsaw.com 1. MODEL NUMBER MODEL NUMBER. CUSTOMER PART NO. DF765S32B 2. TEST CONDITION 2-1 TYPICAL CONDITION

marking 7W 66

Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

TDA5340

Abstract: trimble multi Track target automotive keyless go nxp Biphase mark code trx 434 433 mhz schematic antenna PG-TSSOP-28
Contextual Info: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.2, 13.06.2012 Wireless Sense & Control Edition 13.06.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

automotive keyless go nxp

Abstract: AT24C32C aurix tda5340 ic 40110 be down counter
Contextual Info: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.0, 17.02.2012 Wireless Sense & Control Edition 17.02.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

WBC1-1TL

Abstract: marking LCBX LCBX DC1027A LT5560 HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1
Contextual Info: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5560 is a low power, high performance broadband active mixer. This double-balanced mixer can be driven by a single-ended LO source and requires only

TB0205A

Abstract: 437MHz 447MHZ 4527 footprint dimension
Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date:

AD9957

Abstract: "High Temperature" VCO 40x jq AD9856 AD9857 BF533 CFR30
Contextual Info: 1 GSPS Quadrature Digital Upconverter w/18-Bit IQ Data Path and 14-Bit DAC AD9957 PRELIMINARY TECHNICAL DATA FEATURES 1GSPS internal clock speed up to 400MHz analog out Integrated 1GSPS 14-bit DAC 250 MHz I/Q data throughput rate Phase noise ≤ –123 dBc/Hz (400 MHz carrier)

GRM1882C1H

Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz

TA1113A

Contextual Info: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 475MHz Part No: MP03079 Model: TA1113A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage: 5V

RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

Contextual Info: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.2, 13.06.2012 Wireless Sense & Control Edition 13.06.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully-integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR

BB132

Abstract: BB133 BB134 ILA5737D
Contextual Info: ILA5737D Low-power high-frequency triple metric waves, microwaves mixer-oscillator for video equipment IC ILA5737D is monolithic microcircuit, low-power high-frequency triple (metric waves, microwaves) mixer-oscillator for video equipment used in TV tuners and videotape recorder

7107 GP

Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier

RD07MUS2B

Abstract: RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

Contextual Info: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 452.70MHz Part No: MA08247 Model: TB0205A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40°C to 85°C