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RD01MUS2 Datasheets (1)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RD01MUS2		Mitsubishi	Silicon MOSFET Power Transistor 520MHz,1W	Original	PDF	217.74KB	6

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Mitsubishi Electric


Mitsubishi Electric RD01MUS2-501 RF-MOSFET 7.2V 520MHz 0.8W SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
GLYN GmbH & Co. KG	RD01MUS2-501		95			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric RD01MUS2B-T513
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Win Source Electronics	RD01MUS2B-T513		239,660			1 - 10 - 100 $0.66 1000 $0.44 10000 $0.44	Buy Now
Mitsubishi Electric RD01MUS2-T513
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	RD01MUS2-T513		51,000			1 - 10 - 100 $0.61 1000 $0.41 10000 $0.41	Buy Now
Mitsubishi Electric RD01MUS2-T113
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	RD01MUS2-T113		12,000			1 - 10 - 100 $1.41 1000 $1.14 10000 $1.14	Buy Now

RD01MUS2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GP 839 DIODE Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.	Original	rd01mus2 520mhz gp 839 diode gp 809 diode +7gp 841 diode mos fet 1127 rf transistor s-parameter vhf rd01mus2-101 t06 transistor 5343 transistor transistor m 839	PDF
RD01MUS2 Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd01mus2 520mhz rd01mus2-101 gp 839 diode +7fan 3792 mos fet 1127 gp 809 diode idq100 01lot 0703 transistor 3m touch systems	PDF
GP 809 DIODE Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from	Original	rd01mus2b 527mhz 15dbtyp nov2011 +9gp 809 diode gp 839 diode 4406 mosfet diode zener 7.2v rd01mus2b-101 gp 520 diode diode gp 805 mosfet vhf power amplifier gp 007 diode	PDF
taiyosya Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.	Original	an-uhf-085-a rd01mus2 rd07mvs1b 068yd +9400-470mhz rpc03 taiyosya grm188r11h grm1882 grm2162c1h grm1882c1h grm2162c grm2162c1h470gd01e	PDF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION OUTLINE DRAWING 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.	Original	rd01mus2 520mhz	PDF
RD01MUS2 Abstract: 627 DIODE Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from	Original	rd01mus2 520mhz oct2011 627 diode	PDF
GRM1882C1H Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz	Original	an-uhf-087-a rd01mus2 450-527mhz grm1882c1h +4grm1882c1h150ja01 single-stage amplifier grm1882c1h102ja01 4005a	PDF
RD01MUS2 Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd01mus2 520mhz rd01mus2-101 gp 841 diode +4gp 809 diode gp 839 diode gp 839 c111m	PDF
GP 809 DIODE Abstract: GP 007 DIODE Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from	Original	rd01mus2b 527mhz 15dbtyp gp 809 diode +1gp 007 diode	PDF
3M Touch Systems Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd01mus2 520mhz 3m touch systems	PDF
RD01MUS2 Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V	Original	an-uhf-097-b rd01mus2 rd07mus2b 400-470mhz +11086ze-g 470mhz an-uhf-097-b-grm2162c1h101gd01e grm2162c1h120gd01e grm2162c1h200gd01e grm2162c1h220gd01e grm2162c1h390gd01e grm2162c1h8r0dd01e rpc05 2306c	PDF
RD01MUS2 Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency	Original	an-uhf-085 rd01mus2 rd07mvs1b 068yd +6400-470mhz rpc03 rpc05 grm188r11h taiyo rpc03 micro electronics	PDF
marking 7W 66 Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	rd07mus2b 175mhz 527mhz 870mhz +10vhf/uhf/870mhz oct2011 marking 7w 66 an-uhf-105 transistor jc 817 an-uhf-116 an-uhf116 gp 830 diode diode gp 424 an-900-041	PDF
RD07MUS2B Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.	Original	rd07mus2b 175mhz 527mhz 870mhz +10vhf/uhf/870mhz rd07mus2 rd07mus diode gp 424 rd07m an-vhf-046 an-uhf-116 f763 an-uhf-106 an-vhf-053	PDF

AN-UHF-098 Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	rd07mus2b 175mhz 527mhz 870mhz +2vhf/uhf/870mhz an-uhf-098	PDF