15DBTYP Search Results

SLM-090A1

Contextual Info: ÛTM ^O ITÄL 350 1500 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits ixers Shape & Size Specifications Lo Level Frequency Isolation +7dBm Typ. RF:350-500MHz L0:400-550MHZ IF :DC-150MHz LO-RF:20dB Min. 30dBTyp. LO-IF:10dB Min. (15dBTyp.)

Contextual Info: ìk 'é à H M C 152 M ICRO W AVE CO R PO R A TIO N PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz FEBRUARY 1998 Features General Description GAIN: 15dBtyp. The HM C152 is an amplifier with gain con­ trolled with a 5 bit binary word. The magni­

0-32U

Abstract: LA06
Contextual Info: ìk 'é à H M C 1 5 2 M ICRO W AVE CO R PO R A TIO N PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz FEBRUARY 1998 Features General Description GAIN: 15dBtyp. The HMC152 is an amplifier with gain con­ trolled with a 5 bit binary word. The magni­

SLM-090A1

Abstract: SLM-090A
Contextual Info: HITACHI “ METALS 800 / 900 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits Shape & Size Specifications Lo Level +7dBm Typ. Conversion Loss Frequency RF:700-1000MHz L0:700-1100MHZ IF :DC - 400MHz Impedance Isolation LO-RF:18dB Min. 30dB Typ.

NE32184A

Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Contextual Info: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E

3SK129

Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
Contextual Info: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘

IM10

Contextual Info: 800 / 900 MHz Band Chip Multilayer D.B.MIXER ' Model No. SLM-090A1 Shape & Size Equivalent Circuits Specifications Lo Level +7dBm Typ. Conversion Loss RF:700-1000MHz LO :700-1100MHz

2SK131

Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Contextual Info: - 34 - f m ít % m £ m A i fr K V Eft * fê Ê * 1 ft * (V) (A) % S ft* P d/ P c h (W) Ig s s (max) (A) Vg s (V) W (min) (max) V d s (A) (A) (V) 4# tt (Ta=25eC ) Id (min) (max) V d s (V) (V) (V) (A) (min) (typ) V d s (S) (S) (V) 2SK128 föT LF LN A }

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

2SK308 2Sk310 2SK311 2SK312

Abstract: 2SK318 2SK325 2SK293A 2SK295 2SK300 LM 1011 2SK293 2SK294 2SK314
Contextual Info: - 42 - m % tt £ ffl m £ m t £ ft f 1 K V* V) Vg s * * (V) X ñ * të I* (A) >\ « X ñ * P d /P c h (W) Ig s s (max) (A) W s Vg s (V) (min) (max) Vd s (V) (V) (V) U ? ] (max) Vd s (A) (A) (13=25*0) 14 ft (V) , gm (min) (S) Id (A) Id (A) Vd s (V) 2SK293