nec 2412
Abstract: NE24283A 2412 NEC
Contextual Info: N E C / C A L I F OR N I A S bE D bM2?mM 00QH2S2 5Û3 » N E C C T ^ |.2 £ NEC ULTRA LOW NOISE NE24283A PSEUDOMORPHIC HJ FET OUTLINE DIMENSIONS Units In mm FEATURES OUTLINE 83A IMlOS • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN:
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00qh2s2ne24283acapabiliti38nec 2412+12412 nec
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NE32184A
Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Contextual Info: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B
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ne345l-10bne345l-20bne20248ne24200+13ne24283ane320844/12gbzne760384/12ghzne76184ane32184aku-bandnez1011-4anec x-bandne32684ahz necne42184a
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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