2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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2SK609
Contextual Info: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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NE70083
Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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an-pf-1007ne430ne345lne372+624-hourne70083ne372800an83901ne71083matching transformer - line matching transformed
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ne71084
Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0
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2SK609
Abstract: NE71084 NE71000M
Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05
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ne71084
Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package
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ne71084
Abstract: 2SK609 2SK406 NE71000 NE710-00
Contextual Info: LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fM A x : NE710 SERIES 90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0.3 iin, Wg = 280 jrni CO T> N+ CONTACT LAYER Triple Epitaxial Technology) PROVEN RELIABILITY AND STABILITY
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2SK609
Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08
Contextual Info: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ ated gain thru K-band by employing a recessed 0.3 micron
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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NE70083
Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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an-pf-1007ne430ne345lne372+6ne70083planar transformer theorysmall signal gaas fetx-band microwave fetne71083dli-1988-1
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NE71000
Abstract: 2SK609 NE71084 NE71083 2SK60 NE7100 2sk406 NE710 Z168 NE710-00
Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET N O IS E F IG U R E & A S S O C IA TE D G A IN V«. F R EQ U EN C Y V w = 3 V, lo s s 1 0 m A FEATU R ES VE R Y HIG H fuax: 9 0 G Hz LO W N O IS E F IG U R E \ HIG H A S S O C IA T E D G AIN Lo 3 0 .3 \ s . W o s 280
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