2SK582
Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Contextual Info: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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2SK609
Contextual Info: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY
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2SK609
Abstract: NE71084 NE71000M
Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05
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ne71084
Abstract: 2SK609 2SK406 NE71000 NE710-00
Contextual Info: LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fM A x : NE710 SERIES 90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0.3 iin, Wg = 280 jrni CO T> N+ CONTACT LAYER Triple Epitaxial Technology) PROVEN RELIABILITY AND STABILITY
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2SK609
Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08
Contextual Info: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ ated gain thru K-band by employing a recessed 0.3 micron
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NE71000
Abstract: 2SK609 NE71084 NE71083 2SK60 NE7100 2sk406 NE710 Z168 NE710-00
Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET N O IS E F IG U R E & A S S O C IA TE D G A IN V«. F R EQ U EN C Y V w = 3 V, lo s s 1 0 m A FEATU R ES VE R Y HIG H fuax: 9 0 G Hz LO W N O IS E F IG U R E \ HIG H A S S O C IA T E D G AIN Lo 3 0 .3 \ s . W o s 280
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