2SK60 Search Results

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)

2sk to-92

Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04

Contextual Info: 2SK601 Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS Unit : mm For switching ● High-speed switching ● Direct drive possible with CMOS, TTL ● Downsizing of sets by mini-power type package and automatic inser- 45˚ +0.1 1.0–0.2 0.4±0.08

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOS FETs Small Signal 2SK0601 (2SK601) Silicon N-Channel MOS FET For switching unit: mm • Features Ratings Unit 80 V +0.25 0.4max. 0.4±0.08 +0.1 1.0–0.2 Symbol 45˚ 4.0–0.20 2.6±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 1.5±0.1

2SK0601

Abstract: 2SK601 MS2002
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SK60

Abstract: 2SK601
Contextual Info: Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS FET For switching unit: mm 1.5±0.1 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings (Ta = 25°C) +0.25 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on) ● High-speed switching

2SK601

Abstract: 2SK0601 2SK60
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 2.5±0.1 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SJ18 V-FET

Abstract: 2sk60 2SJ18 sony 2Sj18 2SJ18 sony sony 2sk60 V-FET 2SK60 V-FET sony 429 LDGO
Contextual Info: SONY* 2SK60 Silicon N -C hannel Junction V - F E T • * —r - f * ' * 7 - 7 >7 • HiFi: Power A m plifiers • Complementary to 2SJ18 Absolute M axim um Ratings T , - 2 5 C Symbol 2SK60 170 V Drain-toGate V o ltage Soyicr to Gate Voltage Drain Current Gate Current

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 0.4 max. 2.6±0.1 Rating Unit Drain to source voltage VDS 80 V Gate to source voltage VGSO 20 V Drain current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.5±0.1 VDS Gate-source voltage (Drain open) VGSO Drain current ID Peak drain current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

2SK609

Contextual Info: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

2SK68A

Abstract: 2SK44 D 2SK70 2SK79 2SK63 2SK44 2SK68 2SK73 2SK163 2SK46
Contextual Info: - 30 - f m « tt « ffl m & ft 5fi K 2SK43 S> 'K- 2SK44 2SK44(IH 2SK45 NEC 2SK47 NBC * -30 0 DC, LF A. A-SW w D -30 GDO LF LN A N' D -20 GDS LF LN A N D -20 GDS DC, RF N D -22 GDO N D -30 GDO N D -20 GDO C—MIC 2SK46 (V) LF A, RF 1 /E. Vg s * X * t (V)