2SK614 Search Results

Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL

2SK614

Abstract: to-92 type
Contextual Info: Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL +0.2 Symbol +0.2 0.45 –0.1

2sk to-92

Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80

Contextual Info: 2SK614 Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS Unit : mm For switching 4.0±0.2 5.1±0.2 5.0±0.2 Low ON-resistance RDS(on) ● High-speed switching ● Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 –0.1 0.45 –0.1 • Absolute Maximum Ratings (Ta = 25˚C)

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.1±0.2 For switching circuits 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 4.0±0.2 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ■ Absolute Maximum Ratings (Ta = 25°C)

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm • Features 5.0±0.2 0.7±0.2 5.1±0.2 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL 4.0±0.2 12.9±0.5

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL 0.7±0.2 • Features 13.5±0.5

Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 0.7±0.1 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open) VGSO 20 V 0.5 A 1.0 A 750 mW 150

2SK582

Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Contextual Info: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

2SK2276

Abstract: 2sk227
Contextual Info: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030