3SK269 Search Results

Contextual Info: High Frequency FETs 3SK269 Silicon N-Channel 4-pin MOS FET For UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature V VG1S ±8 V VG2S

3SK269

Abstract: SC-82
Contextual Info: High Frequency FETs 3SK269 Silicon N-Channel 4-pin MOS FET For UHF amplification M Di ain sc te on na tin nc ue e/ d unit: mm 2.1±0.1 • Features 0.425 0.425 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID ±30

3sk269

Contextual Info: 3SK269 High Frequency FETs 3SK269 Silicon N-Channel 4-pin MOS Unit : mm For VHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 3 2 4 1 0.3±0.1 Large power gain PG 0.65 ● 1.3±0.1 Low noise-figure NF

Contextual Info: High Frequency FETs 3SK269 Silicon N-Channel 4-pin MOS FET For UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 15 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID ±30 mA Allowable power dissipation

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

3SK192

Abstract: 2SK651
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

3SK2411

Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli­ Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

3sk287

Abstract: 3SK139 3sk247 3SK285
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4

3sk272

Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Contextual Info: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)

3sk fet

Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Contextual Info: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663