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Contextual Info: Panasonic GaAs MMICs GN8061 GaAs 1C Unit : mm For semiconductor laser drive • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. Ta = 25°C ■ Absolute Maximum Ratings Parameter Symbol Rating 6 V DD
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5v laser diode
Contextual Info: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 8 High-speed switching 2 7 ● High output 3 6 Pulse current and DC bias current can be controlled. 4 5 M Di ain sc te on na tin nc ue e/ d ● 0.7min. 6.4±0.2 4.5max. 4.0max. 1.3typ. 1 ● 10max. 2.54±0.25 • Features
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gn806110max5v laser diode |
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VIB-10
Abstract: 2SD874 GN8061 MA3068 8 pin 5v power supply ic TA 7622
Contextual Info: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 8 High-speed switching 2 7 ● High output 3 6 Pulse current and DC bias current can be controlled. 4 5 ● 0.7min. 6.4±0.2 4.5max. 4.0max. 1.3typ. 1 ● 10max. 2.54±0.25 • Features 0.5 For semiconductor laser drive
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gn806110max35max100ma+5vib-102sd874ma30688 pin 5v power supply icta 7622
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2SD874
Abstract: GN8061 MA3068
Contextual Info: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 1 8 2 7 M Di ain sc te on na tin nc ue e/ d High-speed switching ● High output 6 Pulse current and DC bias current can be controlled. 4 5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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gn806110max2sd874ma3068 |
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gn1015
Abstract: GN1021 GN1041 GN101
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers Type No. NF (dB) PG (dB) Measuring Condition Q -— >D i Application • U/V CATV Wide Band Amp. Buffer Amp. SHF IF Amp. Idd (mA) Circuit Construction Package f(MHz) No. GN1010 2.0 9 3 25 100 - 2000 FET one-stage amp. (with band control pin)
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gn1010gn1015gn1041gn1044+3gn1021gn1022gn101
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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k3025
Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8
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gn1010gn1042gn1044gn8061+16gn806201076bn01077n01087b01091b01093bk3025k3192k3047k2538k2960k2923k3035k3165k3028k2576
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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2SD874
Abstract: GN8061 MA3068 Panasonic LP
Contextual Info: Panasonic GaAs MMICs G N 8061 G aA s 1C For semiconductor laser drive U nit : m m • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. ■Absolute Maximum Ratings Ta = 25°C P aram eter S ym bol R ating
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gn8061100ma2sd874ma3068+1panasonic lp
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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mn101c01cmn15224mn101c01dmn15226+16mn101c027mn15261mn101c03amn101c38amn15263mn101c06dmn1873287an6512n2sk3190mn171202mn158413mn15142mn187164mn6740an7210mn15283
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2sk6622sk11032sj1632sk198+162sk3742sk1232sk12162sk18422sj1642sk301k614k 18332sk 129 agn10152sk1257 equivalent2sk19622sk 170 pingn1021ic stk411-220e circuitk996
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