2SK1842 Search Results

2SK1842

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS

Contextual Info: 2SK1842 Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For infrared sensor +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 2 Rating VGDO – 40 Gate-Source voltage

latest Infrared-Sensor

Abstract: 2SK1842
Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS

2SK1842

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Drain current Gate current Power dissipation Junction temperature

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Unit −40 V Gate-source voltage (Drain open) VGSO

2SK1842

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) ● Low gate to source leakage current, IGSS

Infrared-Sensor

Abstract: Junction-FET 2SK1842 XP1D874
Contextual Info: Composite Transistors XP1D874 N-channel junction FET 2.1±0.1 0.65 2.0±0.1 2 1.25±0.1 0.425 5 3 4 0.9± 0.1 +0.05 • 2SK1842 x 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 1 : Source FET1 2 : Drain 3 : Source (FET2) Absolute Maximum Ratings (Ta=25˚C)

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 ● Low gate to source leakage current, IGSS

2SK1842

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.4±0.2 5˚ 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low gate-source cutoff current IGSS • Low capacitance (Common source) Ciss , Coss , Crss

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET 0.425 Unit: mm 0.20±0.05 4 1.25±0.10 2.1±0.1 5 0.12+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SK1842

Abstract: XP0D874 XP1D874
Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET 0.425 Unit: mm For low-frequency impedance conversion For infrared sensor 0.20±0.05 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SK1842

Abstract: XP0D874 XP1D874
Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET 0.425 Unit: mm For low-frequency impedance conversion For infrared sensor 0.20±0.05 4 5˚ • Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)

3SK192

Abstract: 2SK651
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK621

Abstract: xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871
Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . . .n Main Characteristics H rrm r1 V ds Application U U Li Neh 2 elements XN1871 Low noise amp. switching n (A) (V) XN1872 * 30 0.02 50 0.1 v,„ Idss (V) (mA)

2SK621

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET Unit: mm (0.425) For low-frequency impedance conversion For infrared sensor 0.20±0.05 4 5˚ • Features 0.2±0.1 1.25±0.10 2.1±0.1 5 0.12+0.05 –0.02 • Two elements incorporated into one package

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id