2SK621
Abstract: XN1872
Text: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1
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XN1872
2SK621
2SK621
XN1872
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2SK621
Abstract: XN01872 XN1872 FET MARKING
Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01872
XN1872)
2SK0621
2SK621)
2SK621
XN01872
XN1872
FET MARKING
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2SK621
Abstract: XN01872 XN1872 FET23
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10
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2002/95/EC)
XN01872
XN1872)
2SK621
XN01872
XN1872
FET23
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)
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2002/95/EC)
XN01872
XN1872)
2SK0621
2SK621)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)
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PDF
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2002/95/EC)
XN01872
XN1872)
2SK0621
2SK621)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)
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2002/95/EC)
XN01872
XN1872)
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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2SK621
Abstract: XN01872 XN1872 JIS C 1102
Text: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half
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XN01872
XN1872)
2SK621
XN01872
XN1872
JIS C 1102
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2SK621
Abstract: XN01872 XN1872
Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.
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XN01872
XN1872)
2SK0621
2SK621)
2SK621
XN01872
XN1872
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2SK621
Abstract: XN1872 XN01872
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10
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2002/95/EC)
XN01872
XN1872)
2SK621
XN1872
XN01872
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d20 diode
Abstract: 2SJ497
Text: Transistors Selection Guide by Applications and Functions • FET 5-Pin Mini T y p e (D15) n n M ain C h a ra cteristics n_ n w r "~l U U U Application m V dsx (mA) (V) N -ch 2 elem en ts XN1871 - * 30 20 - 100 1.5 to 3.5 6-Pin S-Mini (D15) Type (D9)
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2SK198
2SK621
XN1871
XN1872
2SB970)
2SD1328)
d20 diode
2SJ497
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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2SK645
Abstract: 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635
Text: - 58 - Sí £ tt A f ffl MOS N E 200 DSX RF PA,SW MOS N E 800 DSS ±20 S V/UHF LN A GaAs N D 10 DSX RF A, t'ftltitl MOS N E 70 DSS * a % * 2SK617 « ± W 8 tëff 2SK618 2SK619 2SK62Û 2SK521 BÍL féT féT 2SK622 2SK623 2SK624 B aL föT 2SK625 V * fi JÈ
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2SK616
2SK617
2SK618
2SK619
2SK620
2SK755
2SK632
150max
2SK757
2SK633
2SK645
2SK630
2SK626
2sk633
2SK63
2SK621
2SK647
2SK628
2SK629
2SK635
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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2SK621
Abstract: xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871
Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . . .n Main Characteristics H rrm r1 V ds Application U U Li Neh 2 elements XN1871 Low noise amp. switching n (A) (V) XN1872 * 30 0.02 50 0.1 v,„ Idss (V) (mA)
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XN1871
2SK198
XN1872
2SK621
XN1D873/XP1D873
2SK1103
XN1D874/XP1D874
2SK1842
AUN228
AUN230
2SK621
xn7651
pnp and npn
Mini Type (D7)
360-200
2SK1103
2SK1842
2SK198
UN2213
XN1871
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2SK621
Abstract: transistor xn n227 K-1103
Text: Transistore Selection Guide by Applications and Functions •F E T s 5 Pin Mini T ype (D12) n n Main C haracteristics n n V ds S rrm r1 A pplication * V dsx ü U u [I U Q Neh 2 elem ents Neh 2 elem ents (V) XN1871 Low noise amp. switching XN 1872 n Id V,h
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XN1871
2SK621
874/X
2SB970)
UN215
UN216
UN217
UN222
UN223
N225/U
2SK621
transistor xn
n227
K-1103
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2SK621
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)
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2SK198
2SK621
XN1871
XN1872
XN1D873/XP1D873
XN1D874/XP1D874
2SK1103
2SK1842
AUN228
AUN230
2SK621
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id
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XN1872
XN1D874/XP1D874
2SK198
2SK621
XN1D873/XP1D873
NPNf2SD132R^
SO-10C
SO-14CD79)
SO-14
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5pin marking VJ
Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H
Text: ^ S 5 S S í / ^ y*T — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J * T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l
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UN2215
2SD601
2SC3130
2SB709A
2SD601A
UN2112
UN2212
5pin marking VJ
marking AE 5pin
AX05
N2211
9p marking
Z 211H
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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2SK608
Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
Text: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü
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A721W
MA3000-
2SK608
D717Y
2SC4894
2sk1216
C3967
2SC3967
2sk316
MA151WK
2sk123
2sc4238
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TRANSISTOR D1915
Abstract: D1915 transistor D1915 Transistors D1915 n227
Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) • 5 Pin Mini Type (D11) * 6 Pin S Mini Type (D7) • 6 Pin Mini Type (D12) Package Transistor, FET A Prelim inary •R e s is to r Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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XN1111
XP1111
XN1112
XP1112
XP1113
XN1114
XP1114
XN1115
XP1115
XN1116
TRANSISTOR D1915
D1915 transistor
D1915 Transistors
D1915
n227
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