K379 Search Results

K379 Datasheets (2)

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Gedore Torque

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K 37 90		Gedore Torque	IMPACT SOCKET 1.1/2"" 90 MM	Original	PDF	6.54MB
K 37 95		Gedore Torque	IMPACT SOCKET 1.1/2"" 95 MM	Original	PDF	6.54MB

K379 Price and Stock

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Vishay Intertechnologies PTN0505K3792BSTS - Custom Tape W/Leader (Alt: PTN0505K3792BSTS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTN0505K3792BSTS	Tape w/Leader			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PTN0505K3792BSTS					1 $11.62 10 $9.11 100 $8.14 1000 $7.37 10000 $7.37	Get Quote
Power Integrations LNK3792D-H006-TL 10 W (85-484 VAC) - Tape and Reel (Alt: LNK3792D-H006-TL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LNK3792D-H006-TL	Tape & Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.84	Buy Now
Mouser Electronics	LNK3792D-H006-TL					1 - 10 - 100 - 1000 - 10000 $0.78	Get Quote
EBV Elektronik	LNK3792D-H006-TL			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies PTN0505K3792BST1 - Tape and Reel (Alt: PTN0505K3792BST1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTN0505K3792BST1	Tape & Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PTN0505K3792BST1					1 - 10 - 100 - 1000 $2.17 10000 $2.09	Get Quote
Power Integrations LNK3792D-H003-TL 10 W (85-484 VAC) - Tape and Reel (Alt: LNK3792D-H003-TL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LNK3792D-H003-TL	Tape & Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.84	Buy Now
Mouser Electronics	LNK3792D-H003-TL					1 - 10 - 100 - 1000 - 10000 $0.78	Get Quote
EBV Elektronik	LNK3792D-H003-TL			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK3798(STA4,Q,M) MOSFET N-Channel Enhancement Mode 900V 3-Pin SC-67 - Rail/Tube (Alt: 2SK3798(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3798(STA4,Q,M)	Tube			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	2SK3798(STA4,Q,M)		40		1	1 $2.25 10 $1.69 100 $1.40 1000 $1.40 10000 $1.40	Buy Now
Vyrian	2SK3798(STA4,Q,M)		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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K379 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K3797 Abstract: 2SK3797 2SK3797 equivalent Contextual Info: K3797 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.5 S (標準)	Original	2sk3797 sc-67 2-10u1b k3797 +12sk3797 equivalent	PDF
k3797 Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	2sk3797 k3797 k3797 transistor 2sk3797 equivalent +3400v dc circuits power control tc8020 2-10u1b	PDF
K3797 Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q) Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	2sk3797 k3797 k3797 transistor 2sk3797 equivalent +2600vth 2sk3797(q	PDF
k3639 Abstract: K379 K3793 ECKN Contextual Info: Thte document ti ttw w p m i a Corporation CUSTOMER DRAWING Amphand Corporation and b doltamd on ‘ to b * dlMloNd. rapreduood or uMd, In ar M l* bv anyofi* ottitr than Amphenol ngM I* granted to alodooo 4,60+0,04 1 "1 C? Iu REV ISIO N S SYM ECKN DESCRIPTION	OCR Scan	k3639 k3793 bbf16002n k379 +1eckn	PDF
K3797 Transistor Abstract: K3797 2SK3797 54V4 transistor k3797 K379 Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	2sk3797 k3797 transistor k3797 54v4 +2transistor k3797 k379	PDF
K3799 Abstract: 2sk3799 K379 Contextual Info: K3799 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 6.0 S (標準)	Original	2sk3799 sc-67 2-10u1b k3799 +1k379	PDF
k3798 Abstract: 2SK3798 K379 Contextual Info: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2sk3798 sc-67 2-10u1b k3798 +1k379	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2sk3798	PDF
k3799 Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2sk3799 k3799	PDF
k3798 Abstract: 2SK3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2sk3798 k3798	PDF
K3799 Abstract: 2sk3799 Contextual Info: K3799 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 6.0 S (標準)	Original	2sk3799 sc-67 2-10u1b k3799	PDF
k3798 Abstract: 2SK3798 equivalent 2SK3798 K379 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2sk3798 k3798 2sk3798 equivalent k379	PDF
K3799 Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379 Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)	Original	2sk3799 k3799 2sk3799 equivalent transistor 2sk3799 +2k3799 transistor k379	PDF
k3799 Abstract: K3799 Transistor Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.0S (typ.)	Original	2sk3799 k3799 k3799 transistor	PDF

D836A Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a Contextual Info: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483	OCR Scan	mn115p 1204b 1215p mn1221 +161227b 1237/a 1277b mn1281 mn12811 mn12821 d836a k1606 b948a k 1833 n6015 d856a k753 k379 k749a b941a	PDF
k3797 Abstract: K3797 Transistor K379 2SK3797 Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2sk3797 k3797 k3797 transistor k379	PDF
Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2sk3799	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2sk3798	PDF
K3799 Abstract: 2sk3799 2SK3799 equivalent transistor 2SK3799 Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2sk3799 k3799 2sk3799 equivalent transistor 2sk3799	PDF
k3797 Abstract: K3797 Transistor Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	2sk3797 k3797 k3797 transistor	PDF
k3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2sk3798 k3798	PDF
545 voltsensor Abstract: HYS3o Contextual Info: Models 545 and 546 Features • Dual Set-Point High and Low ■ Triple Output (HI, GO, LO) High Level Output (100 mA) . ■ Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance ■ Variable Hysteresis ■ Latching Capability	OCR Scan	mk378 mk379 r2401 000157b +2545 voltsensor hys3o	PDF
k3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2sk3798 k3798	PDF
k3797 Abstract: 2SK3797 Contextual Info: K3797 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.5 S (標準)	Original	2sk3797 sc-67 2-10u1b k3797	PDF

K379 Search Results

K379 Datasheets (2)

K379 Price and Stock

Vishay Intertechnologies PTN0505K3792BSTS

Power Integrations LNK3792D-H006-TL

Vishay Intertechnologies PTN0505K3792BST1

Power Integrations LNK3792D-H003-TL

Toshiba America Electronic Components 2SK3798(STA4,Q,M)

K379 Datasheets Context Search

K3797

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K3797

k3639

K3797 Transistor

K3799

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k3798

K3799

k3798

K3799

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D836A

k3797

K3799

k3797

k3798

545 voltsensor

k3798

k3797