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Toshiba America Electronic Components 2SK3798(STA4,Q,M) POWER MOSFET TRANSISTOR TO-220(S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3798(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	2SK3798(STA4,Q,M)		40		1	1 $2.25 10 $1.69 100 $1.40 1000 $1.40 10000 $1.40	Buy Now
Vyrian	2SK3798(STA4,Q,M)		13,534			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies CRCW201040K2FKEF Thick Film Resistors - SMD 3/4watt 40.2Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW201040K2FKEF	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
Vishay Intertechnologies CRCW060323R7FKEA Thick Film Resistors - SMD 1/8 Watt 23.7ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW060323R7FKEA	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies VR68000001003FAC00 Metal Film Resistors - Through Hole 100Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	VR68000001003FAC00	Reel			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
YAGEO Corporation RT0603BRD07432KL Thin Film Resistors - SMD 1/10W 432K ohm .1% 25ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RT0603BRD07432KL	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now

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K3798 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3798 Abstract: 2SK3798 K379 Contextual Info: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798 K379	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Abstract: 2SK3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798 k3798 2SK3798	PDF
k3798 Abstract: 2SK3798 equivalent 2SK3798 K379 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798 2SK3798 equivalent 2SK3798 K379	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Abstract: 2SK3798 Contextual Info: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798	PDF
K3798 Abstract: 2SK3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 K3798 2SK3798	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798	PDF