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Toshiba America Electronic Components 2SK3798(STA4,Q,M) POWER MOSFET TRANSISTOR TO-220(S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3798(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	2SK3798(STA4,Q,M)	Tube		16 Weeks	50	1 - 10 - 100 $0.73 1000 $0.60 10000 $0.60	Buy Now
Bristol Electronics	2SK3798(STA4,Q,M)		40		3	1 - 10 $1.69 100 $1.41 1000 $1.41 10000 $1.41	Buy Now
Vyrian	2SK3798(STA4,Q,M)		2,406			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies CRCW201040K2FKEF Thick Film Resistors - SMD 3/4watt 40.2Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW201040K2FKEF	Reel	20,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
Vishay Intertechnologies CRCW060323R7FKEA Thick Film Resistors - SMD 1/10watt 23.7ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW060323R7FKEA	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Toshiba America Electronic Components 2SK3798(Q) Trans MOSFET NCH 900V 4A 3Pin3Tab TO220SIS (Alt: 2SK3798(Q))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	2SK3798(Q)			26 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K3798 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3798 Abstract: 2SK3798 K379 Contextual Info: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798 K379	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Abstract: 2SK3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798 k3798 2SK3798	PDF
k3798 Abstract: 2SK3798 equivalent 2SK3798 K379 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798 2SK3798 equivalent 2SK3798 K379	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Abstract: 2SK3798 Contextual Info: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798	PDF
K3798 Abstract: 2SK3798 Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 K3798 2SK3798	PDF
Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798	PDF