XN01872 Search Results

2SK621

Abstract: XN01872 XN1872 FET23
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)

2SK0665

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872G Silicon n-channel enhancement MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package ■ Features ■ Basic Part Number • 2SK0665 x 2 Parameter Gate-source voltage (Drain open)

2SK621

Abstract: XN01872 XN1872 FET MARKING
Contextual Info: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)

2SK0665

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872G Silicon n-channel enhancement MOSFET For switching • Package ■ Features • 2SK0665 x 2 • Code Mini5-G2 • Pin Name 1: Drain (FET1) 2: Drain (FET2) 3: Gate (FET2)

2SK621

Abstract: XN01872 XN1872 JIS C 1102
Contextual Info: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half

2SK621

Abstract: XN01872 XN1872
Contextual Info: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.

2SK621

Abstract: XN1872 XN01872
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the