UN2112 Search Results

ft 103

Abstract: LD-5461BS 1414C BTA136 D1555 TLP434A UN2112 UN2212 UNR2112 UNR2212
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2212 (UN2212) + UNR2112 (UN2112)

UN2224

Abstract: UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2121 UN2122
Contextual Info: - 342 - MAÆfê M s « ffl & VcBO V UN2112 UN2113 UN2114 ÜN2115 UN2116 UN2117 UN2118 UN 2119 UN2121 UN2122 UN2123 UN2124 UN2210 UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2221 UN2222 UN2223 UN2224 UN4110 UN4111 UN4112 UN4113 UN4114

unr211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN2112

Abstract: UN2212 UNR2112 UNR2212 XN0A312 XN1A312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0A312 (XN1A312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10

XN4112

Abstract: UN2112 UNR2112 XN04112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04112 (XN4112) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number

XN04312

Abstract: UN2112 UN2212 UNR2112 UNR2212 XN4312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04112 (XN4112) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

UN2112

Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04312 (XP4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: Composite Transistors XP06112 XP6112 Silicon PNP epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

UNR2110

Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

UNR2119

Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Contextual Info: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UN2112

Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Contextual Info: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

N2114

Abstract: marking som 6pin N2213 AE 3PIN ZD43
Contextual Info: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

mmun2111t1

Abstract: sot-23 marking jn
Contextual Info: Order this data sheet by MMUN2111T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

Contextual Info: Composite Transistors XN06112 XN6112 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO