UNR211 Search Results

unr211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)

UNR211W

Contextual Info: Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.65 • REB = 100 kΩ, without RB , built-in high-resistor between emitter and base. • Mini-type package, allowing downsizing of the equipment.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01110 Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2110 x 2 Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR211H x 2 Parameter

UNR211W

Contextual Info: Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.65 • REB = 100 kΩ, without RB , built-in high-resistor between emitter and base. • Mini-type package, allowing downsizing of the equipment.

Contextual Info: Composite Transistors XP03389 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR2211 (UN2211) + UNR2118 (UN2118) 0.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111M Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR211M x 2 Parameter

UNR2110

Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

UNR2111

Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor

UNR2110

Abstract: XP01110
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01110 Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • UNR2110 x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)

2-11d

Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou

UNR211M

Abstract: XN0111MG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111MG Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package ■ Features ■ Basic Part Number • UNR211M x 2

XN04311

Abstract: UNR2111 UNR2211 XN4311 UN2111 UN2211
Contextual Info: Composite Transistors XN04311 XN4311 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2211 (UN2211) + UNR2111 (UN2111)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01114 Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2114 x 2 Parameter

UNR2113

Abstract: XP01113
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01113 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2113 x 2 Parameter

UN2115

Abstract: UN2215 UNR2115 UNR2215 XN04315 XN4315
Contextual Info: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2215 (UN2215) + UNR2115 (UN2115)

UNR2118

Abstract: UNR2119 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

Panasonic Main Unit VB -5150

Abstract: UNR211N UNR221N UP0431N
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)

UP04311

Abstract: UNR2111 UNR2211
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04311 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching For digital circuits M Di ain sc te on na tin nc ue e/ d 0.10±0.02 1.60±0.05

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XP0NG8A Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SWD) 0.2±0.05 Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04315G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)