211D Search Results
211D Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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U90A1211D0A |
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ExpressPort QSFP+, High Speed Input Output Connectors, CAGE ASSEMBLY. | |||
130-3162-11D |
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Paladin® 112Gb/s Backplane Connector, 3-Pair, 6 Column, Daughtercard Module, Nickel Sulfamate. | |||
U90A1211D01 |
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ExpressPort QSFP+, High Speed Input Output Connectors, CAGE ASSEMBLY. | |||
130-3142-11D |
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Paladin® 112Gb/s Backplane Connector, 3-Pair, 4 Column, Daughtercard Module, Nickel Sulfamate. | |||
130-4182-11D |
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Paladin® 112Gb/s Backplane Connector, 4-Pair, 8 Column, Daughtercard Module, Nickel Sulfamate. |
211D Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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2-1-1D |
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Transformers 6PIN DIP RF WIDEBAND | Original | 265.54KB | 3 | ||
211-D |
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - BATTERY SPRING CONTACT, "C, D", .040" DIA MUSIC WIRE | Scan | 110.17KB | 1 | ||
211D | Unknown | Semiconductor Devices, Diode, and SCR Datasheet Catalog | Scan | 63.75KB | 1 | ||
2-1-1DL |
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Balun, RF/IF and RFID, MAGNETICS RF TRANSFORMER THT | Original | 3 | |||
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Kiwi Instruments | 采用 SOT563 封装的 4.5V 至 17V 输入、2A 输出、1200kHz 同步降压转换器 KP52221XD 是一种简单易用、高效集成的同步降压转换器。它具有 4.5V 到 17V 的宽输入电压范围,非常适合于 12V 和 15V 等各种常见的输入电压轨。它支持高达 2A 的持续输出电流,输出电压范围为 0.8V 至 7V。 KP522211D 轻载工作在脉冲频率调制模式 (PFM)下以维持高轻载效率;KP522218D 工作在强制脉宽调制模式 (FPWM) 下以实现全负载电流下固定的开关频率和低输出纹波。 KP52221XD 集成了完善的保护功能,包括输入欠压保护 (UVLO),逐周期谷底限流保护 (OCL),输出欠压打嗝保护 (UVP),输出过压保护 (OVP) 和过温保护 (OTP),以确保其在不同的工作条件下保持安全、可靠运行。 KP52221XD 采用小尺寸的 SOT563 封装,工作结温范围为 -40℃ 到 125℃。 | Original | ||||
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Lontium Semiconductor | MIPI to 2-Port LVDS Converter | Original | ||||
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Kiwi Instruments | 采用 SOT563 封装的 4.5V 至 17V 输入、3A 输出、1200kHz 同步降压转换器 KP52321XD 是一种简单易用、高效集成的同步降压转换器。它具有 4.5V 到 17V 的宽输入电压范围,非常适合于 12V 和 15V 等各种常见的输入电压轨。它支持高达 3A 的持续输出电流,输出电压范围为 0.8V 至 7V。 KP523211D 轻载工作在脉冲频率调制模式 (PFM)下以维持高轻载效率;KP523218D 工作在强制脉宽调制模式 (FPWM) 下以实现全负载电流下固定的开关频率和低输出纹波。 KP52321XD 集成了完善的保护功能,包括输入欠压保护 (UVLO),逐周期谷底限流保护 (OCL),输出欠压打嗝保护 (UVP),输出过压保护 (OVP) 和过温保护 (OTP),以确保其在不同的工作条件下保持安全、可靠运行。 KP52321XD 采用小尺寸的 SOT563 封装,工作结温范围为 -40℃ 到 125℃。 | Original |
211D Price and Stock
onsemi NCS2211DR2GIC AMP CLASS AB MONO 1.5W 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NCS2211DR2G | Cut Tape | 11,453 | 1 |
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NCS2211DR2G | Reel | 15,000 | 9 Weeks | 2,500 |
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NCS2211DR2G | 310,026 | 1 |
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NCS2211DR2G | 2,500 |
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NCS2211DR2G | 7,500 | 9 Weeks | 2,500 |
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NCS2211DR2G | 10 Weeks | 2,500 |
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NCS2211DR2G | Cut Tape | 1,995 | 0 Weeks, 1 Days | 5 |
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NCS2211DR2G | 44,020 |
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NCS2211DR2G | 11 Weeks | 2,500 |
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NCS2211DR2G | 5,000 |
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NCS2211DR2G | 40,520 |
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Texas Instruments TPS2421-1DDARIC HOT SWAP CTRLR GP 8SOPWR |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPS2421-1DDAR | Reel | 7,500 | 2,500 |
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TPS2421-1DDAR | Cut Tape | 2,471 | 0 Weeks, 1 Days | 1 |
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TPS2421-1DDAR | 35,686 |
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TPS2421-1DDAR | 26,112 |
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Texas Instruments LP5912-1.1DRVRIC REG LINEAR 1.1V 500MA 6-WSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LP5912-1.1DRVR | Cut Tape | 5,910 | 1 |
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Texas Instruments SN74CB3T16211DGGRIC BUS SWITCH 12 X 1:1 56-TSSOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SN74CB3T16211DGGR | Digi-Reel | 3,816 | 1 |
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SN74CB3T16211DGGR | 184 |
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SN74CB3T16211DGGR | Cut Tape | 3,233 | 0 Weeks, 1 Days | 1 |
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Texas Instruments LP211DRIC COMPARATOR 1 DIFF 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LP211DR | Cut Tape | 2,861 | 1 |
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LP211DR | 116,148 | 1 |
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LP211DR | Cut Tape | 2,184 | 0 Weeks, 1 Days | 1 |
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211D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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211DContextual Info: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor |
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MIL-PRF-39006/22 11-Mar-11 211D | |
211DContextual Info: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor |
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MIL-PRF-39006/22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 211D | |
211DContextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum |
Original |
Mil-PRF-39006/22 18-Jul-08 211D | |
Contextual Info: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor |
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MIL-PRF-39006/22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
ic 2114
Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
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E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 10knductor ic 2114 ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 | |
Contextual Info: 20W Desktop For I.T.E. ETDA-211DAxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC, C-Tick |
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ETDA-211DAxx 24VDC ETDA-211DA05 ETDA-211DA06 ETDA-211DA07 ETDA-211DA09 ETDA-211DA10 ETDA-211DA15 ETDA-211DA16 ETDA-211DA18 | |
ic 2113
Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
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E/211F/211H/211L/211M/211N/211T/211V/211Z UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 ic 2113 UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 | |
UNR2111
Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
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E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2111 UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119 | |
211D
Abstract: TFS211D
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TFS211D Pfeiffer30 211D | |
ETDA21Contextual Info: 20W Desktop For I.T.E. ETDA-211DNxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC |
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ETDA-211DNxx 24VDC ETDA-211DN05 ETDA-211DN06 ETDA-211DN07 ETDA-211DN09 ETDA-211DN10 ETDA-211DN15 ETDA-211DN16 ETDA-211DN18 ETDA21 | |
211DContextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum |
Original |
Mil-PRF-39006/22 08-Apr-05 211D | |
Contextual Info: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size (mm) Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings(Ta=25℃) |
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SML-211 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT | |
211DContextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum |
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Mil-PRF-39006/22 11-Mar-11 211D | |
SML211UT
Abstract: SML-211 SML-211DT SML-211UT SML-211YT T-86
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SML-211 SML-211YT SML-211WT SML-211DT SML-211UT SML211UT SML-211DT SML-211UT SML-211YT T-86 | |
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Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/211D MIL-PRF-19500/211C 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177, | |
Contextual Info: SML-211DT Data Sheet SML-21 Series 2012(0805) 2.0x1.25mm(t=0.8mm) Features ・Abundant color variations with diverse luminous intensity types Color Type V U D Y W M P Specifications Part No. • SML-212VT ■ SML-210VT ■ SML-212U2T A ■ SML-211UT |
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SML-211DT SML-21 SML-212VT SML-210VT SML-212U2T SML-211UT SML-212DT SML-210DT SML-212WT | |
Mini-MoldContextual Info: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size (mm) Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings(Ta=25℃) |
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IF10mA) SML211 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT Mini-Mold | |
211D
Abstract: 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7
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Mil-PRF-39006/22 18-Jul-08 211D 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7 | |
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package |
OCR Scan |
TIM7179-4 MW50970196 TIM7179-4 | |
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz |
OCR Scan |
TIM5964-8SL TIM5964-8SL MW50750196 | |
si2127Contextual Info: TIM5359-8L FEATURES : • L O W IN T E R M O D U L A T I O N D I S T O R T I O N I M 3 = —4 5 dBc at Po = 2 8 dBm . Single Carrier Level • H IG H • H IG H G A IN G ^ B = 8. 5 d B at 5. 3 G H z to 5. 9 G Hz - B R O A D B A N D IN T E R N A L L Y M A T C H E D |
OCR Scan |
TIM5359-8L TIM5359-- si2127 | |
Contextual Info: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE |
OCR Scan |
TIM3742-8SL 2-11D1B) | |
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package |
OCR Scan |
TIM5964-8A 2-11D1B) at260 | |
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz |
OCR Scan |
TIM7179-7L MW50980196 |