211D Search Results

211D

Contextual Info: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor

211D

Contextual Info: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor

211D

Contextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum

Contextual Info: 211D www.vishay.com Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor

ic 2114

Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor

Contextual Info: 20W Desktop For I.T.E. ETDA-211DAxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC, C-Tick

ic 2113

Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05

UNR2111

Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor

211D

Abstract: TFS211D
Contextual Info: TFS 211D.doc version 1.2 VI TELEFILTER 10.12.2003 Prelimenary Specification TFS 211D 1/5 Measurement condition Ambient temperature TA: Input power level: Terminating impedances at fc *: 23 °C 0 dBm input: 740 Ω // -7,7 pF prelimenary value output: 280 Ω // -8,8 pF (prelimenary value)

ETDA21

Contextual Info: 20W Desktop For I.T.E. ETDA-211DNxx SERIES Wide Input Voltage 90 to 264 VAC, 47 to 63 Hz Low Ripple & Noise No minimum load requirement Output Voltage Available From 5VDC Thru 24VDC All units are 100% burned in and tested Single Output 1 Year Warranty Safety Approvals: UL, c-UL, GS, CB, CE, FCC

211D

Contextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum

Contextual Info: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size （mm） Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings（Ta=25℃）

211D

Contextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum

SML211UT

Abstract: SML-211 SML-211DT SML-211UT SML-211YT T-86
Contextual Info: 0805<2.0 1.25 t=0.8mm> Low Current Type IF 10mA SML-211 Series Yellow Emitting Color Orange Red AlGaInP on GaAs Material Package Size(mm) 2012(0805) 2.0x1.25(t=0.8) Part No. SML-211YT SML-211WT SML-211DT Absolute Maximum Ratings (Ta=25∞C) (mW) Yellow Orange

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

Contextual Info: SML-211DT Data Sheet SML-21 Series 2012（0805） 2.0x1.25mm（t=0.8mm） Features ・Abundant color variations with diverse luminous intensity types Color Type V U D Y W M P Specifications Part No. • SML-212VT ■ SML-210VT ■ SML-212U2T A ■ SML-211UT

Mini-Mold

Contextual Info: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size （mm） Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings（Ta=25℃）

211D

Abstract: 336 Tantalum Capacitor 135D 200D 202D MIL-PRF-39006 211D408X075B7
Contextual Info: 211D Vishay Type 211D Wet Tantalum Capacitor Array with Tantalum Cased Tantalum Internal Components for - 55 °C to + 125 °C Operation FEATURES Vishay 211D series was designed as an upgrade to the older and mature 200D and 202D Tantalpak Capacitor assemblies. The 211D is constructed using tantalum

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

si2127

Contextual Info: TIM5359-8L FEATURES : • L O W IN T E R M O D U L A T I O N D I S T O R T I O N I M 3 = —4 5 dBc at Po = 2 8 dBm . Single Carrier Level • H IG H • H IG H G A IN G ^ B = 8. 5 d B at 5. 3 G H z to 5. 9 G Hz - B R O A D B A N D IN T E R N A L L Y M A T C H E D

Contextual Info: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz