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Contextual Info: h "7 > v 7, $ /Transistors 2SB1287 2SB1287 Epitaxial Planar PNP Silicon Transistor Darlington l a i j J H ^ i S l i f f l / L o w Freq. Power Amp. ? - ' J > 1) h FE 2) K|*)J£0 7 0 ‘ o * ¿3 1+0. 1 ] 2 a * o" • Features o 1) Darlington connection provides high
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2sb1287-22ofpsc-67100ms+1-ai/75
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2SD2398
Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287
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2sb15802sb13162sb15672sb1287+72sd21952sd19802sd18672sd23982sd176596-139-b8596-227-d85
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TRANSISTOR D 1765
Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.
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2sb158012sb13162sb15672sb1287+142sd21952sd19802sd18672sd23982sd17651380/2sdtransistor d 1765transistor d 2398marking bb5 icb1316ic bb5b1580diode b1316transistor 1765
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2SB1287
Abstract: 2SD1765
Contextual Info: Inchange Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1765 ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and
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2sb1287o-220fa2sd1765-100v |
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transistor 2SB 1567
Abstract: 2sd 316
Contextual Info: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 8 0 / 2 S D 1 8 6 7 / 2S D 2 3 9 8 / 2 S D 1 765 Power Transistor —100V, — 2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=25"C)
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2sb15802sb13162sb15672sb1287+72195/2s1980/2sd2398/2sd0dlb713o-220fntransistor 2sb 15672sd 316
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2SB1306
Abstract: 2sb130 2SD1832 2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SB1273
Contextual Info: - 84 - Ta=25'C, *EP(ÌTc=25'C 3Ü 2SB1267 2SB1268 2SB1269 2SB1270 % f± £ =# H# ¿ÓDl¿l1 2SB1272 2SB1273 2SB1274 2SB1276 p — A =# D — A 9SR1977 □— 2SB1278 2SB1286 2SB1287 2SB1288 2SB1289 2SB1290 2SB1291 2SB1292 2SB1293 2SB1294 2SB1295 2SB1296
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2sb12672sb12682sb12692sb1270+102sb12712sb12722sd19362sb12962sd1937o-92nl2sb13062sb1302sd18322sb1273
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2SB1287
Abstract: 2SD1765
Contextual Info: SavantIC Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1765 ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and
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2sb1287o-220fa2sd1765-100v |
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2SD1960
Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
Contextual Info: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.
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2sb15802sb13162sb15672sb12b7+82sd21952sd19602sd18672sd23982sd17652sd1960 transistor100v 2a mpt32sb1287
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Contextual Info: 2SB1287 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)40 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k
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2sb1287freq200m |
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB1547
Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020
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zsb1132sb12232sb10242sa1718+142sb9502sb13422sb12242sb10222sa17192sb14642sb15472sb13011409l2sb1193hitachi 2sb 13912sb12262sb12552sb1335
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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3sk212o-220o-220fp2sd1562+152sb10852sd17632sb11862sd20332sb13532sd1562a2sb1335a2sd20372sd206128c432sb13572sb13592sd20412sd20962sd1856
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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SB1335A
Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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o-220t0-220fpo-220fno-220fp+11t0-220sb1335a2sd20612sd2033a2sb14962sb1342transistor 2sd20912sd23942sb13702sc43542sd2041
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Q451
Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
Contextual Info: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac
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2sd2098/2sd2118/2sd2097/2sd21662sd2098sc-622sd2118+16sc-63ta114esa114esa100mata124esa124esaq451143es144esa2sb16162sd247896-229-d124es114es2sd 3132sd 388 a
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2SB1185
Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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o-220t0-220fpt0-220fno-220fp+6o-220fn2sa16342sb13692sb11852sb1569a2sd2037 transistor
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Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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t0-220t0-220fpo-220fno-220fp+3o-2202sa16342sb1369
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2sd1954
Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o
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2sa790m2sa874m2sa937am2sa937amln+162sb909m2sb910m2sb911m2s61042m2sb1044m2sb1066m2sd19542sc5083dtc144eva2sc2030dtc114yla2sc47222sd1228m qrdtd123yv2sc2675dtb143ts
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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2sk22622sk2294-220fn2sk2792+142sk2459n2sk2460n0-220fn2sk27132sk27932sk25402sd25762sd2396ta143e2sd 92 mc2n39042sb1569a2sd20612sd1189f
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2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598
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2n39042n39062n44012n4403+142sa821s2sa830s2sa854s2sb8222n4401 3312n4403 3312n3904 4092n3904 331k 27152n3906 3311352smpsa06 3462n584c847b
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2SD1765
Abstract: 2SB1287
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage
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-100v2sd17652sb1287 |
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2SD2037
Abstract: 2SC4354 2SD1761 J0801 2SB1335 2SB1353 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: ROHN CORP □1 D E l ? f l a f l 1 cn -i" f DGDllta . - I '-” W 3 I P i . ; 7 ~ -Z 9 * & / D ij4 * ^ » n f if f ir r • TO-220, TO-220FP Types p - , i l i 111 n l * New Products Type, - Funclibn_ Driver p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji
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o-220o-22qfp2sb1293t0-220+122sb1294t0-220fp2sb13342sb13352sd20372sc43542sd1761j08012sb13532sd18322sd18562sd2034
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SC5248
Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F
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t0-126fpo-126fp2sb891f2sb889f+112sb14362sd1189f2sd1200f2sd1381f2sd23432sd21662sc52482sd20252sb11852sa19642sb1655
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