2SB1187
Abstract: 2SD1761
Contextual Info: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS
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2sb1187o-220fa2sd1761 |
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2SD1761
Abstract: 2SB1187
Contextual Info: SavantIC Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
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2SB1187
Abstract: 2SB1187 transistor 2SD1761
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2sb11872sd17612sb1187 transistor |
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2SD1761
Abstract: 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
Contextual Info: h -7 > i> 9 /Transistors 2SD1761 2SD1761 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • «4ft 1 VcEt-.l-OSVfTyp.) if U '. J; ^ • / D im e n s io n s U n it : m m ) (at le /ÌB = 2A /0 2A) 21 3) P c = 3 0 W t * i ' . ' r r c - 2 S X : ) ,
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2sd1761tc-25x2sb118709/dimensions+8-55-isolc/le-2a/02a/1c-3v/05a2sd1781transistor npn, p2a2sd1782sb1187 transistorle2a
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2sd1761
Contextual Info: > v 7, $ / T ransistors S 2SD1761 '> u = i> npn t£ J i It if tiitlffl/ L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • \ t ' ; £ 0 / Dimenslons U n it: mm 1) VcE ( sa t ) = 0.3V (Typ.) ir f f i l 'o (at Ic / I b =2A /0.2A ) 2)
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2sd17612sb1187 |
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2sd1761
Contextual Info: 2SD1761 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Features Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25℃)
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2sd1761o-220f2sb1187 |
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2SB1187
Abstract: 2SD1761 Silicon Power Transistors
Contextual Info: Product Specification www.jmnic.com 2SB1187 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power
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2sb1187o-220fa2sd1761silicon power transistors |
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2SB1187
Abstract: 2SD1761 2sb118
Contextual Info: SavantIC Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS
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2sb1187o-220fa2sd17612sb118 |
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2SD1761
Abstract: 2SB1187 2sb118
Contextual Info: Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
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2sd1761o-220fa2sb11872sb118 |
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2SD1761
Abstract: 2SB1187
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A z Excellent current characteristics of DC current gain.
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o-220f2sd17612sb1187 |
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2SD1761
Abstract: 2SB1187
Contextual Info: JMnic Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power
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2sb1187o-220fa2sd1761 |
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2SB1187
Abstract: 2SD1761 2SB1187 transistor
Contextual Info: ROHM CO LTD 4QE D 7 0 2 0 ^ QDQS^Sö 2 E 3 RHM h ÿ > > !Z $ / I ransistors 2SD1761 7 fS 2 -ö 9 E.MfàËky'l'-J-M NPN y ' J - 2SD1761 lÊ ü iî& lilf r iiÎIf fl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • f t f t ^ t jil il/ D i m e n s io n s U nit : mm
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2sd17612sb11872sb1187 transistor |
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SD2037
Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products
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o-220o-22qfp2sb1293t0-220+122sb1294t0-220fp2sb13342sb13352sd20372sc43542sd20412sd20362sb13592sd18322sd18562sd2034
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2SD1761
Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)
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2sd17462sd17472sd1747a2sd1748+112sd1748a2sd17492sd1749a2sb1183sc-632sd1759f52sd17612s017612sd17642sb1172sd1760f5
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2SB1187
Abstract: 2SB1187 transistor 2SD1761
Contextual Info: h7 > y 2 S /Transistors B 1 1 8 2SB1187 7 '> u = i> 1BJiil£1t:fr^1iffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • f t f f M & H / D im e n s io n s U n it: mm Si >4 V; v \J l-7- • tftjk 1) Pc = 3 0 W (T c = 2 5 "C ) 2) A S O A ^ jK l'o
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2sb11872sd17612sb1187 transistor |
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2SD1292
Abstract: 2SA1038 834x
Contextual Info: h 7 > V X £ /T r a n s is to r s panM « S E ¿ í f H t í l C O l ' T • M3ÉIÍHSS • papHffiE>S» 2 7 H !£ 7Tsb i t if, ^ t ir o ^ 3 * « 5 x V N '< X í , r v w X liÿ g f iD ic s iï f â f ê M * £ t > o r í s e . f , -fro n M » ttt tlS D f fla i* » t/« iit ti* r o * 4 ic « t- 3 T a is n i
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2sd1761-220fp2sd17622sb1186+62sb11852sb118104x1ct2sd12922sa1038834x
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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2SD369A
Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M
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2n42322sb7612sb9292sb941+102sd12662sd8562sd1761bdt31a2sd369ato-532sc1025mje2491kt816vmatsua
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2SB1187
Abstract: 2SD1761 2SB1187 transistor
Contextual Info: ROHM CO LTD - 4QE D 7 A 2 A CH C] ODDSSfll $ / T ransistors h "7 > v 2SB1187 T '-3 '1 -Icl ' 2SB1137 3 HRHM l& J ljjS lt^ iiiiiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • W fiT H iH /D im e n s io n s U n it: mm • 1) Pc = 3 0 W (T c = 2 5 ”C)
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2sb11872sd1761t2sd1761o-22qfp+12sb1187 transistor
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2SD2037
Abstract: 2SC4354 2SD1761 J0801 2SB1335 2SB1353 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: ROHN CORP □1 D E l ? f l a f l 1 cn -i" f DGDllta . - I '-” W 3 I P i . ; 7 ~ -Z 9 * & / D ij4 * ^ » n f if f ir r • TO-220, TO-220FP Types p - , i l i 111 n l * New Products Type, - Funclibn_ Driver p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji
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o-220o-22qfp2sb1293t0-220+122sb1294t0-220fp2sb13342sb13352sd20372sc43542sd1761j08012sb13532sd18322sd18562sd2034
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transistor b1184
Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Contextual Info: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K
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2sa1037aklnv2sc412412k3722k+144642ka1037ak2411kb1197k2sa1727transistor b1184b1474c5072c4938b1184 transistorc49982sb1051k23062sc4937
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FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
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2n11122n12122n12172n1711+152n2219a2n22222n2222a2n23692n2369afn10162sc9012on4409on4673on4843c9012s2000a3bul310xi2sd5080mn1016
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747
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