2SB118 Search Results

BD transistor

Abstract: smd marking BD 2SB1189 BD marking
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80

2SB1185

Abstract: 2SD1762
Contextual Info: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage

2SB1187

Abstract: 2SD1761
Contextual Info: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS

transistor 2sb1184

Abstract: 2SB1184
Contextual Info: Transistors SMD Type Power transistor 2SB1184 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15

Contextual Info: Product specification 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO

2SB1185

Abstract: 2SD1762 2sb118
Contextual Info: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING

2SD1763 transistor

Abstract: 2SB1186 2SD1763 2sb1186 equivalent 15 A PNP POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763 APPLICATIONS ·Power amplifier applications.

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

marking BDR

Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

2SB1185

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60

Contextual Info: 2SB1184-P MCC TM Micro Commercial Components Features • • • • • 2SB1184-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-R PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SB1188-R

Contextual Info: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Lead Free Finish/RoHS Compliant "P" Suffix designates • • •

Contextual Info: ROHM CO L T D i> 40E ' 7626^1 OQQSS7S h 7 > ÿ ^ i f / T ransistors Ô ^IRHM 2SB1186 T -2 3 -t - 2 S B - f U — r m P H P 1 1 ; h 7 > y X <? Î î ! E J l } $ l Ì : f t i Ì lÌÌffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector Saturation Voltage z Complement to Type 2SD1762 2. COLLECTOR 3. EMITTER APPLICATIONS z For Use in Low Frequency Power Amplifier

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure

ScansU9X27

Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)

Contextual Info: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)

Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type