2SB1183 Search Results

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

4k resistor

Abstract: 2SB1183 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2SB1183

Abstract: 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

Contextual Info: 2SB1183 h 7 > y ^ i I ./Transistors i t f ^ S 2 B 1 1 8 3 ? - • V T ^ y h > ; > u - ^ & m P N P y ‘J - 1 > h 7 > y ^ i ' Epitaxial Planar PNP Silicon Transistor (Darlington) f i J i ^ l ^ J i i l i f f l / L o w Freq. Power Amp. • «s 1) ? • ^•Jfi'^JiiEil/'Dimensions (Unit : mm)

B1183

Abstract: Darlington pair IC single
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • • • • available in CPT F5 (SC-63) package package marking: B1183*Q, where ★ is hFE code and Q is lot number Darlington connection provides high dc current gain (hFE) includes 4 k£2 (typical) base-to-emitter

Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.

2SD947F

Abstract: 2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SB786
Contextual Info: Transistors 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F 96-126-B23 (94S-321-D23) 283

D947F

Abstract: 2SD947F transistor d 947f TRANSISTOR 2sd947f
Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors I Power Transistor —40V, —2A 2 S B 1 183 / 2S B 12 39 / 2S B 78 6F •F e a tu re s 1 ) Darlington connection for high D C current gain. 2 } Built-in 4 k Q resistor between b a se a n d emitter.

transistor OE 4k

Contextual Info: 2SB1183F5 h ~7 > v Z . $ / T ransistors O C D 4 f c w D l O O A 1 O O C R r O • Wft 1 * - > ;> h > « « ) Epitaxial Planar PNP Silicon Transistor (Darlington) Freq. Power Amp. • wf?\rì£|3|/'Diinensions (Unit : mm) IJ ^ h > iii^ cT iS h F E T i> 5 o

2SB1183F5

Contextual Info: 2SB1183/2SB1183F5 h 7 > y ^ ^ / T ransistors 2SB1183 2SB1183F5 I t 0^ df - ' > & M j£ W t)% E p it a x ia l • 7 ^ 7 V - ^ P Q S R I/L o w P la n a r P N P N P y 'J = 3 > F re q . S ilic o n P o w e r b 7 > y * $ A m p . T r a n s is to r s • $ \-M \f i± l3 /D im e n s io n s Unit : mm)

2SB1183

Abstract: 2SB1239 2SD1759 2SD1861
Contextual Info: 2SD1759 / 2SD1861 Transistors Power transistor 40V, 2A 2SD1759 / 2SD1861 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

Contextual Info: 2SD1759 / 2SD1861 Transistors Power transistor 40V, 2A 2SD1759 / 2SD1861 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

2SD1861

Abstract: 2SB1183 2SB1239 2SD1759
Contextual Info: 2SD1759 / 2SD1861 Transistors Power transistor 40V, 2A 2SD1759 / 2SD1861 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

Contextual Info: 2SD1759F5 I' 7 > y ^ í í / T ransistors 2S 1759F 5 D X tf $ # - I ' - i - M U > b NPN '> y =l > h - 7 $ > w m Epitaxial Planar NPN Silicon Transistor (Darlington) Freq. Power Amp. 1^ fti^ S ilS I/D im e n s io n s (Unit : mm) 1) 3 f - U > S > ii^ T 'S ih F E T '& 5 o

5 amp npn darlington power transistors

Contextual Info: h "7 > v 2SD1759 £ /T ransistors 2SD1759 Epitaxial Planar NPN Silicon Transistors Darlington féJ§}/£ll;fr*tIlllffl/L o w Freq. Power Amp. • fl-ffÎT jiiE il/D im ensio n s (Unit: mm) D ÿ - '; > i 2) BE[SH;ift4kQ(7)}iMjL$: (*)8c<. S S $ 3) 2SB 11 8 3 ¿ 3 > 7 ' J ? £ > £ ,

2SD947F

Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126

2SC4649 N,P

Abstract: 2SC40B UMX13 MDC02 DTA214YU 2S81260 DTA115UK 2sc5073 2sb1107 dta123y
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products types : 1 standard, (2) semi-standard, and (3) custom. (1) Standard products An inventory of these products is maintained so we can responed to customer orders quickly. (2) Semi-standard products

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2SD1761

Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)