2SB1184 Search Results

transistor 2sb1184

Abstract: 2SB1184
Contextual Info: Transistors SMD Type Power transistor 2SB1184 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

Contextual Info: 2SB1184-P MCC TM Micro Commercial Components Features • • • • • 2SB1184-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-R PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure

2sb1184

Contextual Info: 2SB1184 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

b1184

Contextual Info: 2SB1184 S -7 > v 7, $ / T ransistors O Q • w D D 4 1 I 4 i k ° ^ ^ r '> • w “# ^ U 7 V - ^ P N P '> '; = ! > h Epitaxial Planar PNP Silicon Transistors •l&^jJSÍS^Jiiíiffl/Low Freq. Power Amp. • WÄ • #fli''J'îil§il/Dim ensions Unit : mm

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure

Contextual Info: 2SB1184-P MCC TM Micro Commercial Components Features • • • • • • 2SB1184-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-R PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SD1760F5

Abstract: 2SB1184F5
Contextual Info: K > i / 7. £ /Transistors 2 S D 1 7 6 2SD1760F5 F 5 Epitaxial Planar NPN Silicon Transistor féJià3Æ:fritltSfl!/L.ow Freq. Power Amp. • Ü H /D im ensions Unit : mm 1) V c e (sat) VcE(sat)= 0.5V(Typ) (lc/lB= 2A/0.2A) 2) 2SB1184F5 t □ > 7 ' J „ • Features

Contextual Info: 2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free Features: 1.BASE 2.COLLECTOR 3.EMITTER * Low VCE(sat).). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) TO-251 MAXIMUM RATINGS (TA=25ºC unless otherwise noted) Symbol Value Unit Collector-Base Voltage

2SB1185

Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure

Contextual Info: 2SB1184-P MCC TM Micro Commercial Components 2SB1184-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-R Features • • • • • • • Halogen free available upon request by adding suffix "-HF"

2SB1243

Abstract: 2SB1184 transistor 2SB1243 2SD1760 2SD1864 gd244
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor -60V, -3A 2SB1184/2SB1243 •Features •External dimensions (Units: mm) 1) LOW VcE(sat). VcEfsai) = -0.5V (Typ.) (Ic /Ib = -2A/-0.2A) 2) Complements the 2SD1760 /2SD1864. •Structure Epitaxial planar type

2SD1184

Abstract: 2SB1184F5 2SD1184F5 TL-2000
Contextual Info: h ~7 > V 7, $ /Transistors 2SB1184F5 PNP V '; z i> Epitaxial Planar PNP Silicon Transistors 1Ii;J§>J&^^:^i|iflll/Low Freq. Power Amp. 2SB1184F5 il-Jfi \H ±0/D im ensions Unit : mm 1) Vce ( sat Vce (sat )= —0.5V (Typ.) 6 .5 ± 0 .2 (IC /lB = -2 A /-0 .2 A )

Contextual Info: 2SD1760 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

B1185

Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.

2SD1762

Abstract: 230S d1760 D1864
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type

2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SB1184 SC-63

Abstract: 2SB1184 2SB1243 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter

2SB1184

Contextual Info: 2SB1184-P MCC TM Micro Commercial Components Features x x x 2SB1184-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-R PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR NPN TO-252 FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)