2SD1762 Search Results

2SB1185

Abstract: 2SD1762
Contextual Info: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION

2SB1185

Abstract: 2SD1762 2sb118
Contextual Info: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector Saturation Voltage z Complement to Type 2SD1762 2. COLLECTOR 3. EMITTER APPLICATIONS z For Use in Low Frequency Power Amplifier

2SD1762

Abstract: 2SB1185
Contextual Info: Inchange Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SB1185 APPLICATIONS ・For low frequency power amplifier applications PINNING

2SB1185

Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re

2SD1762

Contextual Info: h ’7 > ' s Z . $ /Transistors 2SD1762 x t:$ *y T J l'7 °ls -+ -B N P N h7 > y*$ Epitaxial Planar NPN Silicon Transistor i& J ij& ll^ ^ llf f l /L o w F r e q . Power Amp. 2S D 17 6 2 • ^ J fiv H iE I/D im e n s io n s U n it: mm • 1) VcE(sat) V C E (s a t)= 0 .5 V (T y p .)

2SD1762

Abstract: 230S d1760 D1864
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type

2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: h ~7 > V X £ / T ransistors 2 S D 1 7 6 2 2SD1762 x t f ^ df ' > 7 ; u 7 0 u - ^ N P N '> u = i> h 7 > y x ^ 1£J§>J$! :fr*i,lif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • W f^ & H /D im e n s io n s U n it: mm v*>JV;V'J| -r

transistor B 1184

Abstract: 2SD1762 b 1185
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type

Contextual Info: ROHM CO LTD i »oe • T> T fla fl'J 'H QOOSTL1 h ^ /T r a n s is t o r s 5 BRHM 2SD1762 - 7 ^ 3 3 - 0 7

TRANSISTOR d1760

Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type

2SB1185

Abstract: transistor 2sb1185 2SD1762
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762

2SB1185

Abstract: 2SD1762
Contextual Info: Inchange Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1762 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat) z Complements the 2SB1185 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)