2SB1274 Search Results

2SD1913

Abstract: 2SB1274
Contextual Info: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2SB1274

Abstract: 2SD1913 2SB1274 R
Contextual Info: SavantIC Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2sB1274 transistor

Abstract: 2SB1274
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 1. BASE FEATURES 2. COLLECTOR z z z z Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.

Contextual Info: 2SB1274 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR Features — — — — 1 2 3. EMITTER 3 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

2SB1274

Contextual Info: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES    General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process

Contextual Info: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process Low Saturation Voltage.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 1. BASE FEATURES 2. COLLECTOR z z z z Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.

Transistor TT 2246

Abstract: TT 2246 2SB1274 ENN2246B 2SD1913 Sb127 sd1913
Contextual Info: Ordering number: ENN2246eT| PN P /N PN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A Features • • • • • Wide ASO Adoption o f M BIT process .

2SB1274

Abstract: 2SD1913 82055 D2000 transistor
Contextual Info: Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] • 16.0

2SD1913

Abstract: 2SB1274
Contextual Info: SavantIC Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2sB1274 transistor

Abstract: 2SB1274 transistor 2sb1274 GM322400
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1274 DESCRIPTION •High Reliability ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 FEATURES 1. BASE z z z z Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage. 2. COLLECTOR

2SB1306

Abstract: 2sb130 2SD1832 2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SB1273
Contextual Info: - 84 - Ta=25'C, *EP(ÌTc=25'C 3Ü 2SB1267 2SB1268 2SB1269 2SB1270 % f± £ =# H# ¿ÓDl¿l1 2SB1272 2SB1273 2SB1274 2SB1276 p — A =# D — A 9SR1977 □— 2SB1278 2SB1286 2SB1287 2SB1288 2SB1289 2SB1290 2SB1291 2SB1292 2SB1293 2SB1294 2SB1295 2SB1296

UMS1

Abstract: 2sb941 nec 772 1866 2sa158 2sa1727 2SB1308 2SA1400-Z 2SA1588 2SA1745
Contextual Info: - m € T y p e No. a € Manuf. 2SA 1865 = z m SAN YO B m NEC ÍL H IT ACHI a i 2S A 1 7 4 5 2SA 1868 fé T 2S A 1 7 7 2 s 2 2SB1274 2SA 1873 K 2 2SA 1875 H * . 2SA 1878 2SA 1879 ffSTE 2SA 1881 ^ Z * 2 SA 1588 * ± a FUJITSU fò T MATSUSHITA — A ROHM 2 SB 1219

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1385

Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Contextual Info: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used