2SD1892 Search Results

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

DIL 1AM

Abstract: unl darlington 100X2 2SB1252 2SD1892
Contextual Info: Pow er Tnansistors 2SD1892 2S D 1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1252 Unit * mm 4.4max. 10.2max. 5.7max. • Features 2.9max.H • O ptim um fo r 3 5 W h i-fi o u tp u t

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

Contextual Info: Power T ransistors 2SD1892 2SD1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1252 U n it * mm 4.4m ax. 10.2m ax. • Features 5.7m ax. 2 .9 m a x > • Optimum for 35W hi-fi output • High DC c u rre n t gain

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage

2SB1252

Abstract: 2SD1892 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1892 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output

Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

jrc386d

Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Contextual Info: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42

2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5

2SB1252

Abstract: 2SD1892 High frequency transistors
Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –5 V