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Contextual Info: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage
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2sd18912sb1251 |
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2SD1915
Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915
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ephtc-252sd18912sd18922sd1893+112sd18942sd18952sd18962sd18972sd19122sb12742sd1915t0-220mf2sd1899-z2sb12552sd1907
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2SD1891
Abstract: 2SB1251
Contextual Info: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage
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Contextual Info: Power Transistors 2SD1891 2SD1891 Silicon N P N Tripie-D iffused P lanar Darlington Type Package D im ensions Pow er A m plifier C om plem entary Pair w ith 2SB1251 • Features • Optimum for 3 0 W hi-fi output • High DC c u rre n t gain Iif e : 5000~30000
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2sd18912sb1251ht32fi52 |
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2SB1251
Abstract: 2SD1891
Contextual Info: Power Transistors 2SD1891 2SD1891 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier Complementary Pair with 2SB1251 • Features Package Dimensions Unit ' mm • O p tim u m fo r 3 0 W hi-fi o u tp u t • H igh D C c u r r e n t gain Iife :
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2sd18912sb1251ht32052 |
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+112sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc45352sd16412sb15312sd2340 equivalent2sb12552sb14922sd2328
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2sb1154/2sd17052sb1155/2sd17062sb1156/2sd17072sa1185+62sb1054/2sd14852sb14212sd14572sd1457a2sb1252/2sd18922sb1502/2sd2275
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2SB1232
Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004
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2sb12232sb12242sb12252sb1226+92sb12272sb12282sb12292sd1891o-220fa2sb12512sb12322sb12402sb1255
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mw2sc46272sc50212sa1790+162sc46262sc46552sc48092sc52952sc48082sa1806d2375d1259ad1267ad1265atransistor 2sa19492sd2328atransistors selection guided1261ac37952sb1526
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2SB1251
Abstract: 2SD1891
Contextual Info: Power Transistors 2SB1251 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit –110 V –90 V –5 V –7 A –4 A Collector to base voltage VCBO Collector to emitter voltage
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+142sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc45352sd16412sd2340 equivalentd22542sb14932sd14852sb15312sd23282sd2052 equivalent2sd1707
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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mn101c01cmn15224mn101c01dmn15226+16mn101c027mn15261mn101c03amn101c38amn15263mn101c06dmn1873287an6512n2sk3190mn171202mn158413mn15142mn187164mn6740an7210mn15283
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2SD1485
Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5
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2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+92sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc30542sc42582sd14852sd2340 equivalentaudio darlington 200 w
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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2SB1251
Abstract: 2SD1891
Contextual Info: Power Transistors 2SB1251 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –110 V Collector to emitter voltage VCEO –90 V Emitter to base voltage VEBO –5 V
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2sb12512sd1891 |
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D2029
Abstract: D2328 2SD2340 2SD1641
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors VcEO (V) 50 100 140 Application Functions General-use lc (A) 7 5 7 10 15 20 6 6 20 4 10 3 80 Low VcE(sad 150 200 400 55 60 80/100 Darlington High-hre VcE(sat) (V)
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2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+92sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc45352sd1641d2029d23282sd2340
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2sc46272sc5021-2sa17902sc4626+162sc46552sc48092sc52952sc48082sa18062sd2345d1274ab1317c4714d1707b1108c2258 transistord2052 transistortransistor b11542sd2504 transistorb1398
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